Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We have studied the early stages of silicon nitride chemical vapor deposition (CVD) on silicon dioxide using medium energy ion scattering. The growth mode consists of island nucleation followed by coalescence. Similar behavior is observed for films grown using different precursors and reactor environments, indicating that the growth mode is caused by the fundamental nonwetting nature of the nitride/oxide interface under the conditions used for CVD.

Bibliography

Copel, M., Varekamp, P. R., Kisker, D. W., McFeely, F. R., Litz, K. E., & Banaszak Holl, M. M. (1999). Nucleation of chemical vapor deposited silicon nitride on silicon dioxide. Applied Physics Letters, 74(13), 1830–1832.

Authors 6
  1. M. Copel (first)
  2. P. R. Varekamp (additional)
  3. D. W. Kisker (additional)
  4. F. R. McFeely (additional)
  5. K. E. Litz (additional)
  6. M. M. Banaszak Holl (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:49 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10:56 a.m.)
Indexed 1 year, 6 months ago (Feb. 10, 2024, 11 a.m.)
Issued 26 years, 4 months ago (March 29, 1999)
Published 26 years, 4 months ago (March 29, 1999)
Published Print 26 years, 4 months ago (March 29, 1999)
Funders 0

None

@article{Copel_1999, title={Nucleation of chemical vapor deposited silicon nitride on silicon dioxide}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123100}, DOI={10.1063/1.123100}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Copel, M. and Varekamp, P. R. and Kisker, D. W. and McFeely, F. R. and Litz, K. E. and Banaszak Holl, M. M.}, year={1999}, month=mar, pages={1830–1832} }