Abstract
We have studied the early stages of silicon nitride chemical vapor deposition (CVD) on silicon dioxide using medium energy ion scattering. The growth mode consists of island nucleation followed by coalescence. Similar behavior is observed for films grown using different precursors and reactor environments, indicating that the growth mode is caused by the fundamental nonwetting nature of the nitride/oxide interface under the conditions used for CVD.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:49 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:56 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 11 a.m.) |
Issued | 26 years, 4 months ago (March 29, 1999) |
Published | 26 years, 4 months ago (March 29, 1999) |
Published Print | 26 years, 4 months ago (March 29, 1999) |
@article{Copel_1999, title={Nucleation of chemical vapor deposited silicon nitride on silicon dioxide}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123100}, DOI={10.1063/1.123100}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Copel, M. and Varekamp, P. R. and Kisker, D. W. and McFeely, F. R. and Litz, K. E. and Banaszak Holl, M. M.}, year={1999}, month=mar, pages={1830–1832} }