DOI: 10.1063/1.122962. Light-emissive nonvolatile memory effects in porous silicon diodes

Light-emissive nonvolatile memory effects in porous silicon diodes

10.1063/1.122962

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

It is demonstrated that there are distinct off and on states in the current–voltage characteristics of porous silicon (PS) diodes, and that the visible electroluminescence (EL) is observed in the on state. The PS diodes are composed of semitransparent thin Au films, rapid thermal oxidization (RTO)-treated PS layers (∼0.5 μm thick), p-type Si substrates, and ohmic back contacts. After the PS layers were prepared by anodizing Si wafers in an ethanoic HF solution, the samples were treated by RTO process. The bistable states of this PS diode can be simply and reversibly controlled by the external bias voltage. Based on the behavior of the EL and capacitance–voltage characteristics, the model of memory effect is presented, in which field-induced carrier injection and ejection into and from silicon nanocrystallites strongly affects the carrier transport.

Bibliography

Ueno, K., & Koshida, N. (1999). Light-emissive nonvolatile memory effects in porous silicon diodes. Applied Physics Letters, 74(1), 93â95.

Authors 2

Koki Ueno (first)
Nobuyoshi Koshida (additional)

References 8 Referenced 30

10.1063/1.103561 / Appl. Phys. Lett. (1990)
10.1063/1.106652 / Appl. Phys. Lett. (1992)
10.1063/1.363878 / J. Appl. Phys. (1997)
10.1143/JJAP.34.L705 / Jpn. J. Appl. Phys., Part 2 (1995)
10.1063/1.109121 / Appl. Phys. Lett. (1993)
{'key': '2024020315294981000_r6', 'first-page': '699', 'volume': '452', 'year': '1997', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1997)
10.1143/JJAP.37.1096 / Jpn. J. Appl. Phys., Part 1 (1998)
10.1063/1.116085 / Appl. Phys. Lett. (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:29 a.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 6:39 p.m.)
Issued	26 years, 7 months ago (Jan. 4, 1999)
Published	26 years, 7 months ago (Jan. 4, 1999)
Published Print	26 years, 7 months ago (Jan. 4, 1999)

Funders 0

None

BibTeX

@article{Ueno_1999, title={Light-emissive nonvolatile memory effects in porous silicon diodes}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122962}, DOI={10.1063/1.122962}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ueno, Koki and Koshida, Nobuyoshi}, year={1999}, month=jan, pages={93–95} }

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