DOI: 10.1063/1.122828. Surface and bulk mobilities of oligothiophene single crystals

Surface and bulk mobilities of oligothiophene single crystals

10.1063/1.122828

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-quality single crystals of α-quaterthiophene (α-4T) and α-hexathiophene (α-6T) were investigated to compare intrinsic bulk and surface electrical properties. The bulk properties of these organic p-type semiconductors are derived from extended current–voltage characteristics and the surface properties from single crystal field-effect transistor measurements. Most significantly, charge carrier mobilities as high as 0.5 cm2/V s are observed in α-6T both in the bulk and at the surface. The high quality and purity of the crystals are evident from the low trap densities(&lt;1015 cm−3) and the even lower dopant concentrations (2×1013 for α-4T and 7×1010 cm−3 for α-6T). These intrinsically high performance figures, together with the ease of processing, make these oligothiophenes attractive materials for “plastic electronic” devices.

Bibliography

SchÃ¶n, J. H., Kloc, Ch., Laudise, R. A., & Batlogg, B. (1998). Surface and bulk mobilities of oligothiophene single crystals. Applied Physics Letters, 73(24), 3574â3576.

Authors 4

J. H. Schön (first)
Ch. Kloc (additional)
R. A. Laudise (additional)
B. Batlogg (additional)

References 12 Referenced 36

10.1016/0038-1098(89)90121-X / Solid State Commun. (1989)
10.1063/1.105158 / Appl. Phys. Lett. (1991)
10.1063/1.103182 / Appl. Phys. Lett. (1990)
10.1126/science.268.5208.270 / Science (1995)
10.1109/55.556089 / IEEE Electron Device Lett. (1997)
10.1063/1.363032 / J. Appl. Phys. (1996)
10.1109/16.605476 / IEEE Trans. Electron Devices (1997)
10.1016/S0022-0248(97)00370-9 / J. Cryst. Growth (1997)
{'key': '2024020315250391200_r9'}
10.1002/adma.19960080109 / Adv. Mater. (1996)
{'key': '2024020315250391200_r11'}
{'key': '2024020315250391200_r12', 'first-page': '355', 'volume': '5', 'year': '1995', 'journal-title': 'J. Phys. III'} / J. Phys. III (1995)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:25 a.m.)
Indexed	1 year, 5 months ago (April 2, 2024, 1:21 p.m.)
Issued	26 years, 8 months ago (Dec. 14, 1998)
Published	26 years, 8 months ago (Dec. 14, 1998)
Published Print	26 years, 8 months ago (Dec. 14, 1998)

Funders 0

None

BibTeX

@article{Sch_n_1998, title={Surface and bulk mobilities of oligothiophene single crystals}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122828}, DOI={10.1063/1.122828}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schön, J. H. and Kloc, Ch. and Laudise, R. A. and Batlogg, B.}, year={1998}, month=dec, pages={3574–3576} }

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