Abstract
We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20 Å of an intervening layer of Al2O3 at the Alq/Al interface.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:18 a.m.) |
Indexed | 1 year, 1 month ago (July 13, 2024, 4:33 p.m.) |
Issued | 26 years, 9 months ago (Nov. 16, 1998) |
Published | 26 years, 9 months ago (Nov. 16, 1998) |
Published Print | 26 years, 9 months ago (Nov. 16, 1998) |
@article{Huang_1998, title={Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122628}, DOI={10.1063/1.122628}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, M. B. and McDonald, K. and Keay, J. C. and Wang, Y. Q. and Rosenthal, S. J. and Weller, R. A. and Feldman, L. C.}, year={1998}, month=nov, pages={2914–2916} }