Abstract
Bright organic electroluminescent devices were developed using a metal-doped organic layer as an electron-injecting layer at the interface between the cathode and the emitter layer. The typical device structure is a glass substrate/indium-tin oxide/arylamine/tris(8-quinolinolato)Al (Alq)/metal-doped Alq/Al. Dopant metals are highly reactive metals such as Li, Sr, and Sm. A device with Li-doped Alq layer showed high luminance of over 30 000 cd/m2, while a device without the metal-doped Alq layer exhibited only 3400 cd/m2. These results suggest that the Li doping to the Alq layer generates the radical anions of Alq serving as intrinsic electron carriers, which result in low barrier height for electron injection and high electron conductivity of the Li-doped Alq layer.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:15 a.m.) |
Indexed | 1 month, 2 weeks ago (July 13, 2025, 10:54 p.m.) |
Issued | 26 years, 9 months ago (Nov. 16, 1998) |
Published | 26 years, 9 months ago (Nov. 16, 1998) |
Published Print | 26 years, 9 months ago (Nov. 16, 1998) |
@article{Kido_1998, title={Bright organic electroluminescent devices having a metal-doped electron-injecting layer}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122612}, DOI={10.1063/1.122612}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kido, Junji and Matsumoto, Toshio}, year={1998}, month=nov, pages={2866–2868} }