DOI: 10.1063/1.122596. Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy

Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy

10.1063/1.122596

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have investigated the atomic-scale morphology and composition of the GaSb-on-InAs heterojunction with cross-sectional scanning tunneling microscopy, and find a new “white-noise” component in the wave-vector-dependent roughness spectrum under epitaxial growth conditions routinely employed for type-II quantum well and interband cascade lasers. This phenomenon is associated with random substitutional defects at the interface whose concentration exceeds that due to bulk cross incorporation. We propose these defects originate from the thermodynamically favored but incomplete replacement of As by Sb at the InAs surface during anion exchange.

Bibliography

Harper, J., Weimer, M., Zhang, D., Lin, C.-H., & Pei, S. S. (1998). Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy. Applied Physics Letters, 73(19), 2805â2807.

Authors 5

J. Harper (first)
M. Weimer (additional)
D. Zhang (additional)
C.-H. Lin (additional)
S. S. Pei (additional)

References 18 Referenced 33

10.1116/1.590081 / J. Vac. Sci. Technol. B (1998)
10.1016/S0022-0248(96)00830-5 / J. Cryst. Growth (1997)
10.1116/1.588854 / J. Vac. Sci. Technol. B (1996)
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10.1103/PhysRevLett.72.2749 / Phys. Rev. Lett. (1994)
10.1116/1.587215 / J. Vac. Sci. Technol. B (1994)
10.1116/1.587935 / J. Vac. Sci. Technol. B (1995)
10.1063/1.119311 / Appl. Phys. Lett. (1997)
{'key': '2024020315125849400_r9'}
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{'key': '2024020315125849400_r14', 'first-page': '1418', 'volume': '11', 'year': '1993', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1993)
10.1116/1.587879 / J. Vac. Sci. Technol. B (1995)
10.1016/0022-0248(95)80061-G / J. Cryst. Growth (1995)
{'key': '2024020315125849400_r17'}
{'key': '2024020315125849400_r18'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:13 a.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 7:37 p.m.)
Issued	26 years, 9 months ago (Nov. 9, 1998)
Published	26 years, 9 months ago (Nov. 9, 1998)
Published Print	26 years, 9 months ago (Nov. 9, 1998)

Funders 0

None

BibTeX

@article{Harper_1998, title={Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122596}, DOI={10.1063/1.122596}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Harper, J. and Weimer, M. and Zhang, D. and Lin, C.-H. and Pei, S. S.}, year={1998}, month=nov, pages={2805–2807} }

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