DOI: 10.1063/1.122594. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

10.1063/1.122594

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The optical properties of lattice-matched GaAsSb/InGaAs/InP heterostructures with a varying InGaAs layer thickness (0–900 Å) were investigated. These structures display strong low temperature type II luminescence, the energy of which varies with the InGaAs layer thickness and ranges from 0.453 to 0.63 eV. The type II luminescence was used to determine directly and accurately the conduction band offset of these structures. The values obtained herein are 0.36 and 0.18 eV at 4.2 K for the GaAsSb/InGaAs and GaAsSb/InP heterojunctions, respectively, with the GaAsSb conduction band higher in energy.

Bibliography

Hu, J., Xu, X. G., Stotz, J. A. H., Watkins, S. P., Curzon, A. E., Thewalt, M. L. W., Matine, N., & Bolognesi, C. R. (1998). Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 73(19), 2799â2801.

Authors 8

J. Hu (first)
X. G. Xu (additional)
J. A. H. Stotz (additional)
S. P. Watkins (additional)
A. E. Curzon (additional)
M. L. W. Thewalt (additional)
N. Matine (additional)
C. R. Bolognesi (additional)

References 16 Referenced 133

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{'key': '2024020315132470200_r3'}
{'key': '2024020315132470200_r4', 'first-page': '628', 'volume': '11', 'year': '1991', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1991)
10.1016/0038-1098(78)91010-4 / Solid State Commun. (1978)
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{'key': '2024020315132470200_r8', 'first-page': '19', 'volume': '65', 'year': '1991', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1991)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 10:13 a.m.)
Indexed	2 months, 3 weeks ago (June 15, 2025, 10:01 p.m.)
Issued	26 years, 9 months ago (Nov. 9, 1998)
Published	26 years, 9 months ago (Nov. 9, 1998)
Published Print	26 years, 9 months ago (Nov. 9, 1998)

Funders 0

None

BibTeX

@article{Hu_1998, title={Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122594}, DOI={10.1063/1.122594}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hu, J. and Xu, X. G. and Stotz, J. A. H. and Watkins, S. P. and Curzon, A. E. and Thewalt, M. L. W. and Matine, N. and Bolognesi, C. R.}, year={1998}, month=nov, pages={2799–2801} }

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