Abstract
We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors.
References
16
Referenced
2,491
{'key': '2024020315125143700_r1'}
10.1038/34139
/ Nature (London) (1998)10.1038/34145
/ Nature (London) (1998)10.1038/386474a0
/ Nature (London) (1997)10.1126/science.275.5308.1922
/ Science (1997)10.1038/29954
/ Nature (London) (1998)10.1016/0009-2614(95)00825-O
/ Chem. Phys. Lett. (1995)10.1126/science.266.5188.1218
/ Science (1994){'key': '2024020315125143700_r9'}
{'key': '2024020315125143700_r10'}
{'key': '2024020315125143700_r11'}
10.1016/S0009-2614(98)00144-4
/ Chem. Phys. Lett. (1998)10.1103/PhysRevB.55.R4921
/ Phys. Rev. B (1997){'key': '2024020315125143700_r14'}
10.1126/science.280.5370.1744
/ Science (1998){'key': '2024020315125143700_r16'}
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:13 a.m.) |
Indexed | 25 minutes ago (Aug. 21, 2025, 9:32 a.m.) |
Issued | 26 years, 9 months ago (Oct. 26, 1998) |
Published | 26 years, 9 months ago (Oct. 26, 1998) |
Published Print | 26 years, 9 months ago (Oct. 26, 1998) |
@article{Martel_1998, title={Single- and multi-wall carbon nanotube field-effect transistors}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122477}, DOI={10.1063/1.122477}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Martel, R. and Schmidt, T. and Shea, H. R. and Hertel, T. and Avouris, Ph.}, year={1998}, month=oct, pages={2447–2449} }