Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors.

Authors 5
  1. R. Martel (first)
  2. T. Schmidt (additional)
  3. H. R. Shea (additional)
  4. T. Hertel (additional)
  5. Ph. Avouris (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10:13 a.m.)
Indexed 25 minutes ago (Aug. 21, 2025, 9:32 a.m.)
Issued 26 years, 9 months ago (Oct. 26, 1998)
Published 26 years, 9 months ago (Oct. 26, 1998)
Published Print 26 years, 9 months ago (Oct. 26, 1998)
Funders 0

None

@article{Martel_1998, title={Single- and multi-wall carbon nanotube field-effect transistors}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122477}, DOI={10.1063/1.122477}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Martel, R. and Schmidt, T. and Shea, H. R. and Hertel, T. and Avouris, Ph.}, year={1998}, month=oct, pages={2447–2449} }