DOI: 10.1063/1.122405. Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity

Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity

10.1063/1.122405

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Gold and nickel Schottky barrier photovoltaic detectors have been fabricated on Si-doped AlxGa1−xN layers (0⩽x⩽0.22) grown on sapphire by metalorganic vapor phase epitaxy. Responsivity is independent of the Schottky metal or diode size, and also of the incident power in the range measured (10 mW/m2–2 kW/m2). A higher visible rejection has been observed in the spectral response of Au photodiodes (&gt;103). Time response is resistance-capacitance limited, with time constants as short as 14 ns in Al0.22Ga0.78N diodes. Low frequency noise studies are also presented, and detectivities of 6.1×107 and 1.2×107 mHz1/2 W−1 are determined in GaN/Au and Al0.22Ga0.78N/Au detectors, at −2 V bias.

Bibliography

Monroy, E., Calle, F., MuÃ±oz, E., OmnÃ¨s, F., Gibart, P., & MuÃ±oz, J. A. (1998). Al x Ga 1âx N:Si Schottky barrier photodiodes with fast response and high detectivity. Applied Physics Letters, 73(15), 2146â2148.

Authors 6

E. Monroy (first)
F. Calle (additional)
E. Muñoz (additional)
F. Omnès (additional)
P. Gibart (additional)
J. A. Muñoz (additional)

References 13 Referenced 68

10.1063/1.362677 / J. Appl. Phys. (1996)
10.1063/1.115998 / Appl. Phys. Lett. (1996)
{'key': '2024020315051551600_r3'}
10.1063/1.119673 / Appl. Phys. Lett. (1997)
10.1364/AO.37.005058 / Appl. Opt. (1998)
10.1049/el:19970377 / Electron. Lett. (1997)
10.1063/1.110473 / Appl. Phys. Lett. (1993)
10.1063/1.118837 / Appl. Phys. Lett. (1997)
10.1063/1.120862 / Appl. Phys. Lett. (1998)
{'key': '2024020315051551600_r10'}
10.1063/1.120755 / Appl. Phys. Lett. (1998)
{'key': '2024020315051551600_r12', 'volume': '3', 'year': '1998', 'journal-title': 'MRS Internet J. Nitride Semicond. Res.'} / MRS Internet J. Nitride Semicond. Res. (1998)
{'key': '2024020315051551600_r12a'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:05 a.m.)
Indexed	3 weeks, 4 days ago (Aug. 5, 2025, 9:08 a.m.)
Issued	26 years, 10 months ago (Oct. 12, 1998)
Published	26 years, 10 months ago (Oct. 12, 1998)
Published Print	26 years, 10 months ago (Oct. 12, 1998)

Funders 0

None

BibTeX

@article{Monroy_1998, title={Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122405}, DOI={10.1063/1.122405}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Monroy, E. and Calle, F. and Muñoz, E. and Omnès, F. and Gibart, P. and Muñoz, J. A.}, year={1998}, month=oct, pages={2146–2148} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        5
      ]
    ],
    "date-time": "2025-08-05T13:08:58Z",
    "timestamp": 1754399338513
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "15",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        10,
        12
      ]
    ]
  },
  "abstract": "<jats:p>Gold and nickel Schottky barrier photovoltaic detectors have been fabricated on Si-doped AlxGa1\u2212xN layers (0\u2a7dx\u2a7d0.22) grown on sapphire by metalorganic vapor phase epitaxy. Responsivity is independent of the Schottky metal or diode size, and also of the incident power in the range measured (10 mW/m2\u20132 kW/m2). A higher visible rejection has been observed in the spectral response of Au photodiodes (&amp;gt;103). Time response is resistance-capacitance limited, with time constants as short as 14 ns in Al0.22Ga0.78N diodes. Low frequency noise studies are also presented, and detectivities of 6.1\u00d7107 and 1.2\u00d7107\u2009mHz1/2\u2009W\u22121 are determined in GaN/Au and Al0.22Ga0.78N/Au detectors, at \u22122 V bias.</jats:p>",
  "DOI": "10.1063/1.122405",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:31:27Z",
    "timestamp": 1027690287000
  },
  "page": "2146-2148",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 68,
  "title": "Al\n                  x\n                Ga\n                  1\u2212x\n              N:Si\n           Schottky barrier photodiodes with fast response and high detectivity",
  "prefix": "10.1063",
  "volume": "73",
  "author": [
    {
      "given": "E.",
      "family": "Monroy",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Departmento de Ingenier\u0131\u0301a Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, Universidad Polit\u00e9cnica de Madrid, 28040\u2009Madrid, Spain"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Calle",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Departmento de Ingenier\u0131\u0301a Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, Universidad Polit\u00e9cnica de Madrid, 28040\u2009Madrid, Spain"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Mu\u00f1oz",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Departmento de Ingenier\u0131\u0301a Electr\u00f3nica, ETSI Telecomunicaci\u00f3n, Universidad Polit\u00e9cnica de Madrid, 28040\u2009Madrid, Spain"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Omn\u00e8s",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CRHEA-CNRS, Parc Sophia Antipolis, 06560\u2009Valbonne, France"
        }
      ]
    },
    {
      "given": "P.",
      "family": "Gibart",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CRHEA-CNRS, Parc Sophia Antipolis, 06560\u2009Valbonne, France"
        }
      ]
    },
    {
      "given": "J. A.",
      "family": "Mu\u00f1oz",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Departmento de F\u0131\u0301sica de Materiales, Universidad Aut\u00f3noma de Madrid, Madrid, Spain"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020315051551600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "7433",
      "DOI": "10.1063/1.362677",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020315051551600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3761",
      "DOI": "10.1063/1.115998",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r3"
    },
    {
      "key": "2024020315051551600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "870",
      "DOI": "10.1063/1.119673",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "5058",
      "DOI": "10.1364/AO.37.005058",
      "volume": "37",
      "year": "1998",
      "journal-title": "Appl. Opt."
    },
    {
      "key": "2024020315051551600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "633",
      "DOI": "10.1049/el:19970377",
      "volume": "33",
      "year": "1997",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020315051551600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2455",
      "DOI": "10.1063/1.110473",
      "volume": "63",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2277",
      "DOI": "10.1063/1.118837",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "742",
      "DOI": "10.1063/1.120862",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r10"
    },
    {
      "key": "2024020315051551600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "551",
      "DOI": "10.1063/1.120755",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315051551600_r12",
      "volume": "3",
      "year": "1998",
      "journal-title": "MRS Internet J. Nitride Semicond. Res."
    },
    {
      "key": "2024020315051551600_r12a"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/73/15/2146/18536934/2146_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/73/15/2146/18536934/2146_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T15:05:28Z",
    "timestamp": 1706972728000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/73/15/2146/519761/AlxGa1-xN-Si-Schottky-barrier-photodiodes-with"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        10,
        12
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "15",
    "published-print": {
      "date-parts": [
        [
          1998,
          10,
          12
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.122405",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        10,
        12
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        10,
        12
      ]
    ]
  }
}