DOI: 10.1063/1.122257. Vertical device architecture by molding of organic-based thin film transistor

Vertical device architecture by molding of organic-based thin film transistor

10.1063/1.122257

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

An organic thin film transistor (TFT) of circular geometry is constructed by the use of polymer-based substrate, insulator, and semiconductor. Owing to the plasticity of organic materials, this device is mechanically molded by pressing the central circular drain electrode. A shallow well is created, resulting in the localization of the transistor channel onto the wall of the well. The electrical characteristics of the transistor remain almost unchanged after this molding. The obtained vertical device architecture allows the use of a very large channel width over length ratio, while preserving a maximum drain electrode area to be devoted to the further deposition of liquid crystal or an electroluminescent film. Current output of the order of some milliamperes per square centimeter can be delivered, which makes these molded TFTs well adapted for the construction of display pixels.

Bibliography

Garnier, F., Hajlaoui, R., & El Kassmi, M. (1998). Vertical device architecture by molding of organic-based thin film transistor. Applied Physics Letters, 73(12), 1721â1723.

Authors 3

Francis Garnier (first)
Riadh Hajlaoui (additional)
Mohamed El Kassmi (additional)

References 15 Referenced 26

10.1038/347539a0 / Nature (London) (1990)
10.1002/adma.19900021207 / Adv. Mater. (1990)
10.1038/357477a0 / Nature (London) (1992)
10.1126/science.265.5179.1684 / Science (1994)
10.1126/science.268.5208.270 / Science (1995)
10.1126/science.270.5238.972 / Science (1995)
10.1109/55.556089 / IEEE Electron. Device Lett. (1997)
{'key': '2024020314595456800_r8'}
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10.1098/rsta.1997.0046 / Philos. Trans. R. Soc. London, Ser. A (1997)
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10.1021/cm00046a039 / Chem. Mater. (1994)
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10.1021/cm9603664 / Chem. Mater. (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10 a.m.)
Indexed	4 weeks, 1 day ago (Aug. 2, 2025, 12:41 a.m.)
Issued	26 years, 11 months ago (Sept. 21, 1998)
Published	26 years, 11 months ago (Sept. 21, 1998)
Published Print	26 years, 11 months ago (Sept. 21, 1998)

Funders 0

None

BibTeX

@article{Garnier_1998, title={Vertical device architecture by molding of organic-based thin film transistor}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122257}, DOI={10.1063/1.122257}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Garnier, Francis and Hajlaoui, Riadh and El Kassmi, Mohamed}, year={1998}, month=sep, pages={1721–1723} }

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