Abstract
Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 9:54 a.m.) |
Indexed | 3 days, 2 hours ago (Sept. 3, 2025, 6:04 a.m.) |
Issued | 27 years ago (Aug. 31, 1998) |
Published | 27 years ago (Aug. 31, 1998) |
Published Print | 27 years ago (Aug. 31, 1998) |
@article{Ohnesorge_1998, title={Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122134}, DOI={10.1063/1.122134}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ohnesorge, B. and Weigand, R. and Bacher, G. and Forchel, A. and Riedl, W. and Karg, F. H.}, year={1998}, month=aug, pages={1224–1226} }