Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found.

Bibliography

Ohnesorge, B., Weigand, R., Bacher, G., Forchel, A., Riedl, W., & Karg, F. H. (1998). Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells. Applied Physics Letters, 73(9), 1224–1226.

Authors 6
  1. B. Ohnesorge (first)
  2. R. Weigand (additional)
  3. G. Bacher (additional)
  4. A. Forchel (additional)
  5. W. Riedl (additional)
  6. F. H. Karg (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited 1 year, 7 months ago (Feb. 3, 2024, 9:54 a.m.)
Indexed 3 days, 2 hours ago (Sept. 3, 2025, 6:04 a.m.)
Issued 27 years ago (Aug. 31, 1998)
Published 27 years ago (Aug. 31, 1998)
Published Print 27 years ago (Aug. 31, 1998)
Funders 0

None

@article{Ohnesorge_1998, title={Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.122134}, DOI={10.1063/1.122134}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ohnesorge, B. and Weigand, R. and Bacher, G. and Forchel, A. and Riedl, W. and Karg, F. H.}, year={1998}, month=aug, pages={1224–1226} }