DOI: 10.1063/1.121964. Iron solubility in highly boron-doped silicon

Iron solubility in highly boron-doped silicon

10.1063/1.121964

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100 °C in silicon doped with either 1.5×1019 or 6.5×1014 boron atoms/cm3. We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures &gt;800 °C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon.

Bibliography

McHugo, S. A., McDonald, R. J., Smith, A. R., Hurley, D. L., & Weber, E. R. (1998). Iron solubility in highly boron-doped silicon. Applied Physics Letters, 73(10), 1424â1426.

Authors 5

S. A. McHugo (first)
R. J. McDonald (additional)
A. R. Smith (additional)
D. L. Hurley (additional)
E. R. Weber (additional)

References 20 Referenced 64

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:55 a.m.)
Indexed	3 months, 2 weeks ago (May 15, 2025, 12:04 p.m.)
Issued	26 years, 11 months ago (Sept. 7, 1998)
Published	26 years, 11 months ago (Sept. 7, 1998)
Published Print	26 years, 11 months ago (Sept. 7, 1998)

Funders 0

None

BibTeX

@article{McHugo_1998, title={Iron solubility in highly boron-doped silicon}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121964}, DOI={10.1063/1.121964}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={McHugo, S. A. and McDonald, R. J. and Smith, A. R. and Hurley, D. L. and Weber, E. R.}, year={1998}, month=sep, pages={1424–1426} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        15
      ]
    ],
    "date-time": "2025-05-15T16:04:49Z",
    "timestamp": 1747325089114
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        9,
        7
      ]
    ]
  },
  "abstract": "<jats:p>We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100\u2009\u00b0C in silicon doped with either 1.5\u00d71019 or 6.5\u00d71014\u2009boron\u2009atoms/cm3. We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures &amp;gt;800\u2009\u00b0C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon.</jats:p>",
  "DOI": "10.1063/1.121964",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:49:10Z",
    "timestamp": 1027687750000
  },
  "page": "1424-1426",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 64,
  "title": "Iron solubility in highly boron-doped silicon",
  "prefix": "10.1063",
  "volume": "73",
  "author": [
    {
      "given": "S. A.",
      "family": "McHugo",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Lawrence Berkeley National Laboratory, Berkeley, California\u200994720"
        }
      ]
    },
    {
      "given": "R. J.",
      "family": "McDonald",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lawrence Berkeley National Laboratory, Berkeley, California\u200994720"
        }
      ]
    },
    {
      "given": "A. R.",
      "family": "Smith",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lawrence Berkeley National Laboratory, Berkeley, California\u200994720"
        }
      ]
    },
    {
      "given": "D. L.",
      "family": "Hurley",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lawrence Berkeley National Laboratory, Berkeley, California\u200994720"
        }
      ]
    },
    {
      "given": "E. R.",
      "family": "Weber",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science, University of California at Berkeley, Berkeley, California\u200994720"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020314553514500_r1",
      "first-page": "367",
      "volume": "2",
      "year": "1981",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020314553514500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "196",
      "DOI": "10.1103/PhysRevLett.64.196",
      "volume": "64",
      "year": "1990",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020314553514500_r3"
    },
    {
      "key": "2024020314553514500_r4"
    },
    {
      "key": "2024020314553514500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "535",
      "DOI": "10.1002/j.1538-7305.1956.tb02393.x",
      "volume": "35",
      "year": "1956",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020314553514500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "392",
      "DOI": "10.1103/PhysRev.107.392",
      "volume": "107",
      "year": "1957",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020314553514500_r7",
      "first-page": "438",
      "volume": "EDL-4",
      "year": "1983",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020314553514500_r8",
      "doi-asserted-by": "crossref",
      "first-page": "379",
      "DOI": "10.1063/1.1713322",
      "volume": "35",
      "year": "1964",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314553514500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "498",
      "DOI": "10.1149/1.2411921",
      "volume": "116",
      "year": "1969",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020314553514500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1350",
      "DOI": "10.1149/1.2401685",
      "volume": "121",
      "year": "1974",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020314553514500_r11",
      "doi-asserted-by": "crossref",
      "first-page": "5770",
      "DOI": "10.1103/PhysRevB.41.5770",
      "volume": "41",
      "year": "1990",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020314553514500_r12"
    },
    {
      "key": "2024020314553514500_r13",
      "doi-asserted-by": "crossref",
      "first-page": "2709",
      "DOI": "10.1063/1.113496",
      "volume": "66",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020314553514500_r14",
      "doi-asserted-by": "crossref",
      "first-page": "L380",
      "DOI": "10.1143/JJAP.36.L380",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020314553514500_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1007/BF00617708",
      "volume": "30",
      "year": "1983",
      "journal-title": "Appl. Phys. A: Solids Surf."
    },
    {
      "key": "2024020314553514500_r16",
      "doi-asserted-by": "crossref",
      "first-page": "339",
      "DOI": "10.1149/1.1836433",
      "volume": "143",
      "year": "1996",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020314553514500_r17",
      "doi-asserted-by": "crossref",
      "first-page": "215",
      "DOI": "10.1002/pssa.2210640123",
      "volume": "64",
      "year": "1981",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020314553514500_r18",
      "doi-asserted-by": "crossref",
      "first-page": "223",
      "DOI": "10.1002/pssa.2210760126",
      "volume": "76",
      "year": "1983",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020314553514500_r19",
      "doi-asserted-by": "crossref",
      "first-page": "297",
      "DOI": "10.1016/0378-4363(83)90263-2",
      "volume": "116",
      "year": "1983",
      "journal-title": "Physica B & C"
    },
    {
      "key": "2024020314553514500_r20",
      "doi-asserted-by": "crossref",
      "first-page": "7979",
      "DOI": "10.1103/PhysRevB.31.7979",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/73/10/1424/18536247/1424_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/73/10/1424/18536247/1424_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T14:55:48Z",
    "timestamp": 1706972148000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/73/10/1424/69266/Iron-solubility-in-highly-boron-doped-silicon"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        9,
        7
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          1998,
          9,
          7
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.121964",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        9,
        7
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        9,
        7
      ]
    ]
  }
}