DOI: 10.1063/1.121909. Adatom diffusion at GaN (0001) and (0001̄) surfaces

Adatom diffusion at GaN (0001) and (0001̄) surfaces

10.1063/1.121909

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The diffusion of Ga and N adatoms has been studied for the technologically relevant wurtzite (0001̄) and (0001) surfaces employing density-functional theory. Our calculations reveal a very different diffusivity for Ga and N adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth temperatures, the diffusion of N is by orders of magnitude slower. These results give a very detailed insight of how and under which growth conditions N adatoms can be stabilized and efficiently incorporated at the surface. We further find that the presence of excess N strongly increases the Ga diffusion barrier and discuss the consequences for the growth of GaN.

Bibliography

Zywietz, T., Neugebauer, J., & Scheffler, M. (1998). Adatom diffusion at GaN (0001) and (0001Ì) surfaces. Applied Physics Letters, 73(4), 487â489.

Authors 3

Tosja Zywietz (first)
Jörg Neugebauer (additional)
Matthias Scheffler (additional)

References 15 Referenced 429

10.1063/1.111832 / Appl. Phys. Lett. (1994)
10.1063/1.118300 / Appl. Phys. Lett. (1997)
10.1063/1.365575 / J. Appl. Phys. (1997)
10.1063/1.116474 / Appl. Phys. Lett. (1996)
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10.1557/S109257830000171X / MRS Internet J. Nitride Semicond. Res. (1997)
10.1063/1.357479 / J. Appl. Phys. (1994)
{'key': '2024020314414934500_r8'}
{'key': '2024020314414934500_r9'}
10.1016/0010-4655(94)90187-2 / Comput. Phys. Commun. (1994)
10.1557/PROC-408-43 / Mater. Res. Soc. Symp. Proc. (1995)
{'key': '2024020314414934500_r12'}
10.1103/PhysRevLett.79.3934 / Phys. Rev. Lett. (1997)
10.1103/PhysRevB.56.12 / Phys. Rev. B (1997)
10.1103/PhysRevLett.79.5278 / Phys. Rev. Lett. (1997)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:41 a.m.)
Indexed	2 weeks, 6 days ago (Aug. 2, 2025, 12:50 a.m.)
Issued	27 years ago (July 27, 1998)
Published	27 years ago (July 27, 1998)
Published Print	27 years ago (July 27, 1998)

Funders 0

None

BibTeX

@article{Zywietz_1998, title={Adatom diffusion at GaN (0001) and (0001̄) surfaces}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121909}, DOI={10.1063/1.121909}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zywietz, Tosja and Neugebauer, Jörg and Scheffler, Matthias}, year={1998}, month=jul, pages={487–489} }

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