DOI: 10.1063/1.121781. Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

10.1063/1.121781

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2.

Bibliography

Katayama, K., Yao, H., Nakanishi, F., Doi, H., Saegusa, A., Okuda, N., Yamada, T., Matsubara, H., Irikura, M., Matsuoka, T., Takebe, T., Nishine, S., & Shirakawa, T. (1998). Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates. Applied Physics Letters, 73(1), 102â104.

Authors 13

K. Katayama (first)
H. Yao (additional)
F. Nakanishi (additional)
H. Doi (additional)
A. Saegusa (additional)
N. Okuda (additional)
T. Yamada (additional)
H. Matsubara (additional)
M. Irikura (additional)
T. Matsuoka (additional)
T. Takebe (additional)
S. Nishine (additional)
T. Shirakawa (additional)

References 13 Referenced 62

10.1049/el:19960415 / Electron. Lett. (1996)
{'key': '2024020314371201500_r2'}
10.1143/JJAP.36.L190 / Jpn. J. Appl. Phys., Part 1 (1997)
10.1049/el:19970624 / Electron. Lett. (1997)
10.1049/el:19980357 / Electron. Lett. (1998)
{'key': '2024020314371201500_r6'}
{'key': '2024020314371201500_r7'}
10.1016/0022-0248(95)80048-H / J. Cryst. Growth (1995)
10.1143/JJAP.36.L1568 / Jpn. J. Appl. Phys., Part 1 (1997)
{'key': '2024020314371201500_r10'}
10.1063/1.357558 / J. Appl. Phys. (1994)
10.1063/1.117561 / Appl. Phys. Lett. (1996)
10.1016/0022-0248(92)90915-6 / J. Cryst. Growth (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:37 a.m.)
Indexed	1 year, 2 months ago (June 5, 2024, 7:01 a.m.)
Issued	27 years, 1 month ago (July 6, 1998)
Published	27 years, 1 month ago (July 6, 1998)
Published Print	27 years, 1 month ago (July 6, 1998)

Funders 0

None

BibTeX

@article{Katayama_1998, title={Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121781}, DOI={10.1063/1.121781}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Katayama, K. and Yao, H. and Nakanishi, F. and Doi, H. and Saegusa, A. and Okuda, N. and Yamada, T. and Matsubara, H. and Irikura, M. and Matsuoka, T. and Takebe, T. and Nishine, S. and Shirakawa, T.}, year={1998}, month=jul, pages={102–104} }

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