DOI: 10.1063/1.121719. Modification of InAs quantum dot structure by the growth of the capping layer

Modification of InAs quantum dot structure by the growth of the capping layer

10.1063/1.121719

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications.

Bibliography

Lian, G. D., Yuan, J., Brown, L. M., Kim, G. H., & Ritchie, D. A. (1998). Modification of InAs quantum dot structure by the growth of the capping layer. Applied Physics Letters, 73(1), 49â51.

Authors 5

G. D. Lian (first)
J. Yuan (additional)
L. M. Brown (additional)
G. H. Kim (additional)
D. A. Ritchie (additional)

References 14 Referenced 104

10.1126/science.274.5291.1350 / Science (1996)
10.1063/1.120556 / Appl. Phys. Lett. (1997)
10.1109/16.310117 / IEEE Trans. Electron Devices (1994)
10.1103/PhysRevLett.64.1943 / Phys. Rev. Lett. (1990)
10.1063/1.112790 / Appl. Phys. Lett. (1994)
10.1063/1.112883 / Appl. Phys. Lett. (1994)
10.1016/S0022-0248(96)00870-6 / J. Cryst. Growth (1997)
10.1063/1.114519 / Appl. Phys. Lett. (1995)
{'key': '2024020314380013800_r9'}
10.1080/14786436308207338 / Philos. Mag. (1963)
{'key': '2024020314380013800_r11'}
{'key': '2024020314380013800_r12'}
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{'key': '2024020314380013800_r13', 'first-page': '8543', 'volume': '45', 'year': '1992', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:59 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 9:38 a.m.)
Indexed	1 month, 1 week ago (July 27, 2025, 3:22 a.m.)
Issued	27 years, 1 month ago (July 6, 1998)
Published	27 years, 1 month ago (July 6, 1998)
Published Print	27 years, 1 month ago (July 6, 1998)

Funders 0

None

BibTeX

@article{Lian_1998, title={Modification of InAs quantum dot structure by the growth of the capping layer}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121719}, DOI={10.1063/1.121719}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lian, G. D. and Yuan, J. and Brown, L. M. and Kim, G. H. and Ritchie, D. A.}, year={1998}, month=jul, pages={49–51} }

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