Abstract
Luminescent Er-doped Al2O3 films have been fabricated at room temperature by a technique including magnetron deposition of Er-doped Al film on a silicon substrate and its subsequent electrochemical anodization. The films demonstrate strong Er-related photoluminescence at about 1.53 μm as recorded in the temperature range of 4.2–300 K. The effect is not influenced by annealing of the samples up to 200 °C. Upon annealing at 300–500 °C the luminescence intensity decreases, while above 600 °C it starts to recover. Annealing at 1000 °C restores the photoluminescence spectra to the initial level. The annealing peculiarities observed have been explained by dominant hydrogen outdiffusion at 300–500 °C, rearrangement of point defects at 600–800 °C, and recrystallization processes above 850 °C in the alumina film. Activation energies of these processes have been estimated to be 0.76 eV (for parabolic rate), 0.58 eV (for linear rate), and 0.46 eV (for linear rate), respectively.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:09 a.m.) |
Indexed | 4 months, 2 weeks ago (April 20, 2025, 12:29 a.m.) |
Issued | 26 years, 10 months ago (Oct. 19, 1998) |
Published | 26 years, 10 months ago (Oct. 19, 1998) |
Published Print | 26 years, 10 months ago (Oct. 19, 1998) |
@article{Lazarouk_1998, title={Room-temperature formation of erbium-related luminescent centers in anodic alumina}, volume={73}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121699}, DOI={10.1063/1.121699}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lazarouk, S. K. and Mudryi, A. V. and Borisenko, V. E.}, year={1998}, month=oct, pages={2272–2274} }