DOI: 10.1063/1.121673. Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon

Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon

10.1063/1.121673

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Impurity and minority carrier lifetime distributions were studied in as-grown multicrystalline silicon used for terrestrial-based solar cells. Synchrotron-based x-ray fluorescence and the light beam induced current technique were used to measure impurity and lifetime distributions, respectively. The purpose of this work was to determine the spatial relation between transition metal impurities and minority carrier recombination in multicrystalline silicon solar cells. Our results reveal a direct correlation between chromium, iron, and nickel impurity precipitates with regions of high minority carrier recombination. The impurity concentration was typically 5×1016 atoms/cm2, indicating the impurity-rich regions possess nanometer-scale precipitates. These results provide the first direct evidence that transition metal agglomerates play a significant role in solar cell performance.

Bibliography

McHugo, S. A., Thompson, A. C., PÃ©richaud, I., & Martinuzzi, S. (1998). Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon. Applied Physics Letters, 72(26), 3482â3484.

Authors 4

Scott A. McHugo (first)
A. C. Thompson (additional)
I. Périchaud (additional)
S. Martinuzzi (additional)

References 15 Referenced 62

{'key': '2024020314352812700_r1'}
10.1063/1.114124 / Appl. Phys. Lett. (1995)
10.1016/S0927-0248(97)00102-5 / Sol. Energy Mater. Sol. Cells (1997)
10.1149/1.2095543 / J. Electrochem. Soc. (1988)
{'key': '2024020314352812700_r5'}
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10.1002/pssa.2211380241 / Phys. Status Solidi A (1993)
10.1063/1.110600 / Appl. Phys. Lett. (1993)
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{'key': '2024020314352812700_r11', 'first-page': '3869', 'volume': '142', 'year': '1994', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1994)
10.1063/1.119762 / Appl. Phys. Lett. (1997)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:35 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 10:58 p.m.)
Issued	27 years, 1 month ago (June 29, 1998)
Published	27 years, 1 month ago (June 29, 1998)
Published Print	27 years, 1 month ago (June 29, 1998)

Funders 0

None

BibTeX

@article{McHugo_1998, title={Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121673}, DOI={10.1063/1.121673}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={McHugo, Scott A. and Thompson, A. C. and Périchaud, I. and Martinuzzi, S.}, year={1998}, month=jun, pages={3482–3484} }

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