DOI: 10.1063/1.121665. Nanoscale silicon wires synthesized using simple physical evaporation

Nanoscale silicon wires synthesized using simple physical evaporation

10.1063/1.121665

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires.

Bibliography

Yu, D. P., Bai, Z. G., Ding, Y., Hang, Q. L., Zhang, H. Z., Wang, J. J., Zou, Y. H., Qian, W., Xiong, G. C., Zhou, H. T., & Feng, S. Q. (1998). Nanoscale silicon wires synthesized using simple physical evaporation. Applied Physics Letters, 72(26), 3458â3460.

Authors 11

D. P. Yu (first)
Z. G. Bai (additional)
Y. Ding (additional)
Q. L. Hang (additional)
H. Z. Zhang (additional)
J. J. Wang (additional)
Y. H. Zou (additional)
W. Qian (additional)
G. C. Xiong (additional)
H. T. Zhou (additional)
S. Q. Feng (additional)

References 12 Referenced 330

10.1103/PhysRevB.45.9202 / Phys. Rev. B (1992)
{'key': '2024020314333861500_r2', 'first-page': '2349', 'volume': '56', 'year': '1990', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1990)
{'key': '2024020314333861500_r3', 'first-page': '335', 'volume': '363', 'year': '1991', 'journal-title': 'Nature (London)'} / Nature (London) (1991)
10.1016/S0038-1098(97)10143-0 / Solid State Commun. (1998)
{'key': '2024020314333861500_r5'}
10.1126/science.279.5348.208 / Science (1998)
{'key': '2024020314333861500_r7', 'first-page': '739', 'volume': '58', 'year': '1984', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (1984)
10.1103/PhysRevB.48.2827 / Phys. Rev. B (1993)
{'key': '2024020314333861500_r9', 'first-page': '357', 'volume': '26', 'year': '1987', 'journal-title': 'Jpn. J. Appl. Phys., Part 1'} / Jpn. J. Appl. Phys., Part 1 (1987)
10.1063/1.116662 / Appl. Phys. Lett. (1996)
10.1063/1.349510 / J. Appl. Phys. (1991)
{'key': '2024020314333861500_r12', 'first-page': '1689', 'volume': '57', 'year': '1990', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1990)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:33 a.m.)
Indexed	1 month, 4 weeks ago (June 24, 2025, 6:48 a.m.)
Issued	27 years, 1 month ago (June 29, 1998)
Published	27 years, 1 month ago (June 29, 1998)
Published Print	27 years, 1 month ago (June 29, 1998)

Funders 0

None

BibTeX

@article{Yu_1998, title={Nanoscale silicon wires synthesized using simple physical evaporation}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121665}, DOI={10.1063/1.121665}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yu, D. P. and Bai, Z. G. and Ding, Y. and Hang, Q. L. and Zhang, H. Z. and Wang, J. J. and Zou, Y. H. and Qian, W. and Xiong, G. C. and Zhou, H. T. and Feng, S. Q.}, year={1998}, month=jun, pages={3458–3460} }

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