Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We show a negative magnetoresistance (MR) in GaAs with magnetic MnAs nanoclusters (about 1.5% at 30 K in 1 T). The clusters were formed in a two step process consisting of the molecular beam epitaxy of (Ga,Mn)As layer and the subsequent annealing. The origin of the negative MR is attributed to the presence of the MnAs clusters. The mechanism is considered to be a spin-dependent scattering of carriers by MnAs clusters which decreases when the direction of the magnetization between the clusters aligns with the magnetic field.

Bibliography

Akinaga, H., De Boeck, J., Borghs, G., Miyanishi, S., Asamitsu, A., Van Roy, W., Tomioka, Y., & Kuo, L. H. (1998). Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters. Applied Physics Letters, 72(25), 3368–3370.

Authors 8
  1. H. Akinaga (first)
  2. J. De Boeck (additional)
  3. G. Borghs (additional)
  4. S. Miyanishi (additional)
  5. A. Asamitsu (additional)
  6. W. Van Roy (additional)
  7. Y. Tomioka (additional)
  8. L. H. Kuo (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:43 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 9:33 a.m.)
Indexed 1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued 27 years, 2 months ago (June 22, 1998)
Published 27 years, 2 months ago (June 22, 1998)
Published Print 27 years, 2 months ago (June 22, 1998)
Funders 0

None

@article{Akinaga_1998, title={Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121606}, DOI={10.1063/1.121606}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Akinaga, H. and De Boeck, J. and Borghs, G. and Miyanishi, S. and Asamitsu, A. and Van Roy, W. and Tomioka, Y. and Kuo, L. H.}, year={1998}, month=jun, pages={3368–3370} }