DOI: 10.1063/1.121336. Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide

Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide

10.1063/1.121336

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

There exists a strong correlation between the nitrogen concentration profile and infrared (IR) spectroscopy in gate oxynitrides for metal–oxide–Si (MOS) devices. The hot-electron hardness of the MOS device depends strongly on the nitrogen concentration profile in the gate oxide. It is experimentally found that the concentration ratios of nitrogen at SiO2/Si to the maximum amount of nitrogen in the oxide bulk ([N]int./[N]max. bulk) are proportional to the values of IR peak positions of Si–O stretching bonds. A larger value of [N]int./[N]max. bulk indicates a better hot-electron hardness of the MOS device, which can be explained by a reduction of SiO2/Si interfacial strain. The hot-electron hardness in the MOS device can be easily assessed by the IR signals of gate oxynitrides.

Bibliography

Chang-Liao, K.-S., & Lai, H.-C. (1998). Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide. Applied Physics Letters, 72(18), 2280â2282.

Authors 2

Kuei-Shu Chang-Liao (first)
Han-Chao Lai (additional)

References 12 Referenced 12

10.1063/1.103550 / Appl. Phys. Lett. (1990)
10.1143/JJAP.35.L968 / Jpn. J. Appl. Phys., Part 2 (1996)
10.1063/1.107706 / Appl. Phys. Lett. (1992)
10.1063/1.109749 / Appl. Phys. Lett. (1993)
10.1063/1.110400 / Appl. Phys. Lett. (1993)
10.1063/1.113665 / Appl. Phys. Lett. (1995)
10.1143/JJAP.36.L604 / Jpn. J. Appl. Phys., Part 2 (1997)
10.1116/1.589512 / J. Vac. Sci. Technol. B (1997)
10.1063/1.95956 / Appl. Phys. Lett. (1985)
10.1063/1.331239 / J. Appl. Phys. (1982)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:18 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:09 a.m.)
Issued	27 years, 3 months ago (May 4, 1998)
Published	27 years, 3 months ago (May 4, 1998)
Published Print	27 years, 3 months ago (May 4, 1998)

Funders 0

None

BibTeX

@article{Chang_Liao_1998, title={Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121336}, DOI={10.1063/1.121336}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chang-Liao, Kuei-Shu and Lai, Han-Chao}, year={1998}, month=may, pages={2280–2282} }

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