DOI: 10.1063/1.121199. Silicon nanowires prepared by laser ablation at high temperature

Silicon nanowires prepared by laser ablation at high temperature

10.1063/1.121199

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon.

Bibliography

Zhang, Y. F., Tang, Y. H., Wang, N., Yu, D. P., Lee, C. S., Bello, I., & Lee, S. T. (1998). Silicon nanowires prepared by laser ablation at high temperature. Applied Physics Letters, 72(15), 1835â1837.

Authors 7

Y. F. Zhang (first)
Y. H. Tang (additional)
N. Wang (additional)
D. P. Yu (additional)
C. S. Lee (additional)
I. Bello (additional)
S. T. Lee (additional)

References 13 Referenced 493

10.1038/318162a0 / Nature (London) (1985)
10.1038/354056a0 / Nature (London) (1991)
10.1063/1.361416 / J. Appl. Phys. (1996)
{'key': '2024020314124418900_r4', 'first-page': '154', 'volume': '176', 'year': '1993', 'journal-title': 'Phys. Lett. A'} / Phys. Lett. A (1993)
10.1103/PhysRevA.50.R14 / Phys. Rev. B (1994)
10.1002/pssa.2211530221 / Phys. Status Solidi (1996)
10.1116/1.589291 / J. Vac. Sci. Technol. B (1997)
10.1063/1.118711 / Appl. Phys. Lett. (1997)
10.1016/S0022-0248(97)00368-0 / J. Cryst. Growth (1997)
{'key': '2024020314124418900_r10'}
{'key': '2024020314124418900_r11'}
{'key': '2024020314124418900_r12', 'first-page': '739', 'volume': '58', 'year': '1984', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (1984)
10.1103/PhysRevB.6.3777 / Phys. Rev. B (1972)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:12 a.m.)
Indexed	2 weeks ago (Aug. 7, 2025, 4:42 p.m.)
Issued	27 years, 4 months ago (April 13, 1998)
Published	27 years, 4 months ago (April 13, 1998)
Published Print	27 years, 4 months ago (April 13, 1998)

Funders 0

None

BibTeX

@article{Zhang_1998, title={Silicon nanowires prepared by laser ablation at high temperature}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121199}, DOI={10.1063/1.121199}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Y. F. and Tang, Y. H. and Wang, N. and Yu, D. P. and Lee, C. S. and Bello, I. and Lee, S. T.}, year={1998}, month=apr, pages={1835–1837} }

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