DOI: 10.1063/1.121007. Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes

Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes

10.1063/1.121007

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This work deposits (Pb1−xLax)(ZryTi1−y)1−x/4O3 (PLZT) thin films, possessing good ferroelectric properties (Pr=14.4 μC/cm2), on Pt/Ti/SiO2/Si substrates, using SrRuO3 perovskite as bottom electrodes. Precoating a metallic Ru layer on Pt/Ti/SiO2/Si substrates prior to depositing SrRuO3 bottom electrode further improves the film electrical properties. The optimum ferroelectric properties achieved are Pr=25.6 μC/cm2, Ec=47.1 kV/cm, and εr=1204. Analyzing the elemental depth profiles using secondary ions mass spectroscopy reveals that the presence of the metallic Ru layer effectively suppresses the outward diffusion of Ti and Si species. The interdiffusion between the SrRuO3 layer and the subsequently deposited PLZT is also substantially reduced, an effect that is presumed to be the primary factor in improving ferroelectric properties for PLZT thin films.

Bibliography

Liu, K.-S., Tseng, T.-F., & Lin, I.-N. (1998). Improvement of (Pb1âxLax)(ZryTi1ây)1âx/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes. Applied Physics Letters, 72(10), 1182â1184.

Authors 3

Kuo-Shung Liu (first)
Tzu-Feng Tseng (additional)
I-Nan Lin (additional)

References 14 Referenced 43

10.1126/science.246.4936.1400 / Science (1989)
10.1080/00150199008223827 / Ferroelectrics (1990)
10.1109/16.155876 / IEEE Trans. Electron Devices (1992)
10.1116/1.577424 / J. Vac. Sci. Technol. A (1991)
10.1063/1.107488 / Appl. Phys. Lett. (1992)
10.1016/0921-5107(94)90258-5 / Mater. Sci. Eng. B (1994)
{'key': '2024020314062874900_r7', 'first-page': '261', 'volume': '75', 'year': '1997', 'journal-title': 'Philos. Mag. B'} / Philos. Mag. B (1997)
10.1016/0022-3697(93)90159-O / J. Phys. Chem. Solids (1993)
10.1063/1.356388 / J. Appl. Phys. (1994)
{'key': '2024020314062874900_r10', 'first-page': '2570', 'volume': '3', 'year': '1993', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1993)
10.1063/1.110106 / Appl. Phys. Lett. (1993)
10.1063/1.359289 / J. Appl. Phys. (1995)
10.1063/1.113111 / Appl. Phys. Lett. (1995)
10.1063/1.119300 / Appl. Phys. Lett. (1997)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:42 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:06 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:49 a.m.)
Issued	27 years, 5 months ago (March 9, 1998)
Published	27 years, 5 months ago (March 9, 1998)
Published Print	27 years, 5 months ago (March 9, 1998)

Funders 0

None

BibTeX

@article{Liu_1998, title={Improvement of (Pb1‚àíxLax)(ZryTi1‚àíy)1‚àíx/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.121007}, DOI={10.1063/1.121007}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liu, Kuo-Shung and Tseng, Tzu-Feng and Lin, I-Nan}, year={1998}, month=mar, pages={1182‚Äì1184} }

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