Abstract
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ω/□ for 100 Ω/□ films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7−δ thin film on a 5 cm diam sapphire wafer.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:27 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 8:58 a.m.) |
Indexed | 3 weeks, 3 days ago (Aug. 6, 2025, 10 a.m.) |
Issued | 27 years, 6 months ago (Feb. 16, 1998) |
Published | 27 years, 6 months ago (Feb. 16, 1998) |
Published Print | 27 years, 6 months ago (Feb. 16, 1998) |
@article{Steinhauer_1998, title={Quantitative imaging of sheet resistance with a scanning near-field microwave microscope}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120918}, DOI={10.1063/1.120918}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Steinhauer, D. E. and Vlahacos, C. P. and Dutta, S. K. and Feenstra, B. J. and Wellstood, F. C. and Anlage, Steven M.}, year={1998}, month=feb, pages={861–863} }