DOI: 10.1063/1.120852. Electron transport in AlGaN–GaN heterostructures grown on 6H

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

10.1063/1.120852

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns≈1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms.

Bibliography

Gaska, R., Yang, J. W., Osinsky, A., Chen, Q., Khan, M. A., Orlov, A. O., Snider, G. L., & Shur, M. S. (1998). Electron transport in AlGaNâGaN heterostructures grown on 6HâSiC substrates. Applied Physics Letters, 72(6), 707â709.

Authors 8

R. Gaska (first)
J. W. Yang (additional)
A. Osinsky (additional)
Q. Chen (additional)
M. Asif Khan (additional)
A. O. Orlov (additional)
G. L. Snider (additional)
M. S. Shur (additional)

References 20 Referenced 185

{'key': '2024020313574803000_r1', 'first-page': '625', 'volume': '26', 'year': '1976', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1976)
10.1063/1.354787 / J. Appl. Phys. (1993)
{'key': '2024020313574803000_r3'}
{'key': '2024020313574803000_r4'}
10.1007/BF02666636 / J. Electron. Mater. (1996)
{'key': '2024020313574803000_r6', 'first-page': '1655', 'volume': '82', 'year': '1997', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1997)
{'key': '2024020313574803000_r7', 'first-page': '777', 'volume': '25', 'year': '1995', 'journal-title': 'J. Electron. Mater.'} / J. Electron. Mater. (1995)
{'key': '2024020313574803000_r8', 'first-page': '2123', 'volume': '70', 'year': '1996', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1996)
10.1063/1.118940 / Appl. Phys. Lett. (1997)
10.1109/55.624930 / IEEE Electron Device Lett. (1997)
10.1049/el:19970403 / Electron. Lett. (1997)
{'key': '2024020313574803000_r12'}
10.1063/1.120645 / Appl. Phys. Lett. (1998)
10.1063/1.360085 / J. Appl. Phys. (1995)
{'key': '2024020313574803000_r15'}
{'key': '2024020313574803000_r16', 'first-page': '45', 'volume': '22', 'year': '1996', 'journal-title': 'MRS Bull.'} / MRS Bull. (1996)
10.1063/1.120514 / Appl. Phys. Lett. (1997)
{'key': '2024020313574803000_r18', 'first-page': 'K167', 'volume': '16', 'year': '1966', 'journal-title': 'Phys. Status Solidi'} / Phys. Status Solidi (1966)
10.1063/1.116495 / Appl. Phys. Lett. (1996)
10.1146/annurev.ms.15.080185.001415 / Annu. Rev. Mater. Sci. (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:28 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:58 a.m.)
Indexed	3 days, 5 hours ago (Aug. 23, 2025, 9:43 p.m.)
Issued	27 years, 6 months ago (Feb. 9, 1998)
Published	27 years, 6 months ago (Feb. 9, 1998)
Published Print	27 years, 6 months ago (Feb. 9, 1998)

Funders 0

None

BibTeX

@article{Gaska_1998, title={Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120852}, DOI={10.1063/1.120852}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gaska, R. and Yang, J. W. and Osinsky, A. and Chen, Q. and Khan, M. Asif and Orlov, A. O. and Snider, G. L. and Shur, M. S.}, year={1998}, month=feb, pages={707–709} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        24
      ]
    ],
    "date-time": "2025-08-24T01:43:28Z",
    "timestamp": 1755999808336
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "6",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        2,
        9
      ]
    ]
  },
  "abstract": "<jats:p>We investigated two-dimensional electron transport in doped AlGaN\u2013GaN heterostructures (with the electron sheet concentration ns\u22481013\u2009cm\u22122) grown on conducting 6H\u2013SiC substrates in the temperature range T=0.3\u2013300\u2009K. The electron mobility in AlGaN\u2013GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was \u03bcH=2019\u2009cm2/V\u2009s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at \u03bcH=10250\u2009cm2/V\u2009s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms.</jats:p>",
  "DOI": "10.1063/1.120852",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:28:50Z",
    "timestamp": 1027686530000
  },
  "page": "707-709",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 185,
  "title": "Electron transport in AlGaN\u2013GaN heterostructures grown on 6H\u2013SiC substrates",
  "prefix": "10.1063",
  "volume": "72",
  "author": [
    {
      "given": "R.",
      "family": "Gaska",
      "sequence": "first",
      "affiliation": [
        {
          "name": "APA Optics, Inc., Blaine, Minnesota\u200955449"
        }
      ]
    },
    {
      "given": "J. W.",
      "family": "Yang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "APA Optics, Inc., Blaine, Minnesota\u200955449"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Osinsky",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "APA Optics, Inc., Blaine, Minnesota\u200955449"
        }
      ]
    },
    {
      "given": "Q.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "APA Optics, Inc., Blaine, Minnesota\u200955449"
        }
      ]
    },
    {
      "given": "M. Asif",
      "family": "Khan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "APA Optics, Inc., Blaine, Minnesota\u200955449"
        }
      ]
    },
    {
      "given": "A. O.",
      "family": "Orlov",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana\u200946556"
        }
      ]
    },
    {
      "given": "G. L.",
      "family": "Snider",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana\u200946556"
        }
      ]
    },
    {
      "given": "M. S.",
      "family": "Shur",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York\u200912180-3590"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020313574803000_r1",
      "first-page": "625",
      "volume": "26",
      "year": "1976",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1818",
      "DOI": "10.1063/1.354787",
      "volume": "74",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020313574803000_r3"
    },
    {
      "key": "2024020313574803000_r4"
    },
    {
      "key": "2024020313574803000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "777",
      "DOI": "10.1007/BF02666636",
      "volume": "25",
      "year": "1996",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020313574803000_r6",
      "first-page": "1655",
      "volume": "82",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020313574803000_r7",
      "first-page": "777",
      "volume": "25",
      "year": "1995",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020313574803000_r8",
      "first-page": "2123",
      "volume": "70",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2583",
      "DOI": "10.1063/1.118940",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r10",
      "doi-asserted-by": "crossref",
      "first-page": "492",
      "DOI": "10.1109/55.624930",
      "volume": "18",
      "year": "1997",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020313574803000_r11",
      "doi-asserted-by": "crossref",
      "first-page": "637",
      "DOI": "10.1049/el:19970403",
      "volume": "33",
      "year": "1997",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020313574803000_r12"
    },
    {
      "key": "2024020313574803000_r13",
      "doi-asserted-by": "crossref",
      "first-page": "64",
      "DOI": "10.1063/1.120645",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r14",
      "doi-asserted-by": "crossref",
      "first-page": "2846",
      "DOI": "10.1063/1.360085",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020313574803000_r15"
    },
    {
      "key": "2024020313574803000_r16",
      "first-page": "45",
      "volume": "22",
      "year": "1996",
      "journal-title": "MRS Bull."
    },
    {
      "key": "2024020313574803000_r17",
      "doi-asserted-by": "crossref",
      "first-page": "3817",
      "DOI": "10.1063/1.120514",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r18",
      "first-page": "K167",
      "volume": "16",
      "year": "1966",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2024020313574803000_r19",
      "doi-asserted-by": "crossref",
      "first-page": "643",
      "DOI": "10.1063/1.116495",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313574803000_r20",
      "doi-asserted-by": "crossref",
      "first-page": "271",
      "DOI": "10.1146/annurev.ms.15.080185.001415",
      "volume": "15",
      "year": "1985",
      "journal-title": "Annu. Rev. Mater. Sci."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/6/707/18532155/707_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/6/707/18532155/707_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T13:58:02Z",
    "timestamp": 1706968682000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/72/6/707/68922/Electron-transport-in-AlGaN-GaN-heterostructures"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        2,
        9
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "6",
    "published-print": {
      "date-parts": [
        [
          1998,
          2,
          9
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.120852",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        2,
        9
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        2,
        9
      ]
    ]
  }
}