DOI: 10.1063/1.120801. On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

10.1063/1.120801

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Following the observation of the large isotopic effect in D2 passivated gate dielectrics [J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996)], we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2/Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps.

Bibliography

Baumvol, I. J. R., Gusev, E. P., Stedile, F. C., Freire, F. L., Green, M. L., & Brasen, D. (1998). On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing. Applied Physics Letters, 72(4), 450â452.

Authors 6

I. J. R. Baumvol (first)
E. P. Gusev (additional)
F. C. Stedile (additional)
F. L. Freire (additional)
M. L. Green (additional)
D. Brasen (additional)

References 28 Referenced 31

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{'key': '2024020313563009900_r7'}
{'key': '2024020313563009900_r7a'}
10.1063/1.118769 / Appl. Phys. Lett. (1997)
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10.1063/1.92225 / Appl. Phys. Lett. (1981)
{'key': '2024020313563009900_r11'}
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{'key': '2024020313563009900_r15'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:42 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 8:56 a.m.)
Indexed	1 year, 5 months ago (April 5, 2024, 9:34 p.m.)
Issued	27 years, 7 months ago (Jan. 26, 1998)
Published	27 years, 7 months ago (Jan. 26, 1998)
Published Print	27 years, 7 months ago (Jan. 26, 1998)

Funders 0

None

BibTeX

@article{Baumvol_1998, title={On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120801}, DOI={10.1063/1.120801}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Baumvol, I. J. R. and Gusev, E. P. and Stedile, F. C. and Freire, F. L. and Green, M. L. and Brasen, D.}, year={1998}, month=jan, pages={450–452} }

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