Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Nanocrystalline-silicon superlattices are produced by controlled recrystallization of amorphous-Si/SiO2 multilayers. The recrystallization is performed by a two-step procedure: rapid thermal annealing at 600–1000 °C, and furnace annealing at 1050 °C. Transmission electron microscopy, Raman scattering, x-ray and electron diffraction, and photoluminescence spectroscopy show an ordered structure with Si nanocrystals confined between SiO2 layers. The size of the Si nanocrystals is limited by the thickness of the a-Si layer, the shape is nearly spherical, and the orientation is random. The luminescence from the nc-Si superlattices is demonstrated and studied.

Bibliography

Tsybeskov, L., Hirschman, K. D., Duttagupta, S. P., Zacharias, M., Fauchet, P. M., McCaffrey, J. P., & Lockwood, D. J. (1998). Nanocrystalline-silicon superlattice produced by controlled recrystallization. Applied Physics Letters, 72(1), 43–45.

Authors 7
  1. L. Tsybeskov (first)
  2. K. D. Hirschman (additional)
  3. S. P. Duttagupta (additional)
  4. M. Zacharias (additional)
  5. P. M. Fauchet (additional)
  6. J. P. McCaffrey (additional)
  7. D. J. Lockwood (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:47 a.m.)
Indexed 1 year ago (Aug. 24, 2024, 7:07 p.m.)
Issued 27 years, 7 months ago (Jan. 5, 1998)
Published 27 years, 7 months ago (Jan. 5, 1998)
Published Print 27 years, 7 months ago (Jan. 5, 1998)
Funders 0

None

@article{Tsybeskov_1998, title={Nanocrystalline-silicon superlattice produced by controlled recrystallization}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120640}, DOI={10.1063/1.120640}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsybeskov, L. and Hirschman, K. D. and Duttagupta, S. P. and Zacharias, M. and Fauchet, P. M. and McCaffrey, J. P. and Lockwood, D. J.}, year={1998}, month=jan, pages={43–45} }