DOI: 10.1063/1.120601. A “smarter-cut” approach to low temperature silicon layer transfer

A “smarter-cut” approach to low temperature silicon layer transfer

10.1063/1.120601

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 °C.

Bibliography

Tong, Q.-Y., Scholz, R., GÃ¶sele, U., Lee, T.-H., Huang, L.-J., Chao, Y.-L., & Tan, T. Y. (1998). A âsmarter-cutâ approach to low temperature silicon layer transfer. Applied Physics Letters, 72(1), 49â51.

Authors 7

Q.-Y. Tong (first)
R. Scholz (additional)
U. Gösele (additional)
T.-H. Lee (additional)
L.-J. Huang (additional)
Y.-L. Chao (additional)
T. Y. Tan (additional)

References 10 Referenced 92

10.1049/el:19950805 / Electron. Lett. (1995)
{'key': '2024020313472158800_r2'}
10.1143/JJAP.36.1636 / Jpn. J. Appl. Phys., Part 1 (1997)
10.1063/1.119219 / Appl. Phys. Lett. (1997)
10.1116/1.589416 / J. Vac. Sci. Technol. B (1997)
{'key': '2024020313472158800_r6'}
10.1063/1.118586 / Appl. Phys. Lett. (1997)
{'key': '2024020313472158800_r8'}
10.1103/PhysRevB.31.5525 / Phys. Rev. B (1985)
10.1063/1.353049 / J. Appl. Phys. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 8:47 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 22, 2025, 12:45 a.m.)
Issued	27 years, 8 months ago (Jan. 5, 1998)
Published	27 years, 8 months ago (Jan. 5, 1998)
Published Print	27 years, 8 months ago (Jan. 5, 1998)

Funders 0

None

BibTeX

@article{Tong_1998, title={A “smarter-cut” approach to low temperature silicon layer transfer}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120601}, DOI={10.1063/1.120601}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tong, Q.-Y. and Scholz, R. and Gösele, U. and Lee, T.-H. and Huang, L.-J. and Chao, Y.-L. and Tan, T. Y.}, year={1998}, month=jan, pages={49–51} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        22
      ]
    ],
    "date-time": "2025-08-22T04:45:10Z",
    "timestamp": 1755837910021
  },
  "reference-count": 10,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        1,
        5
      ]
    ]
  },
  "abstract": "<jats:p>Silicon wafers were first implanted at room temperature by B+ with 5.0\u00d71012 to 5.0\u00d71015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0\u00d71016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200\u2009\u00b0C.</jats:p>",
  "DOI": "10.1063/1.120601",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:07:39Z",
    "timestamp": 1027688859000
  },
  "page": "49-51",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 92,
  "title": "A \u201csmarter-cut\u201d approach to low temperature silicon layer transfer",
  "prefix": "10.1063",
  "volume": "72",
  "author": [
    {
      "given": "Q.-Y.",
      "family": "Tong",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120, Halle, Germany"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Scholz",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120, Halle, Germany"
        }
      ]
    },
    {
      "given": "U.",
      "family": "G\u00f6sele",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120, Halle, Germany"
        }
      ]
    },
    {
      "given": "T.-H.",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Wafer Bonding Laboratory, School of Engineering, Duke University, Durham, NC 27708"
        }
      ]
    },
    {
      "given": "L.-J.",
      "family": "Huang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Wafer Bonding Laboratory, School of Engineering, Duke University, Durham, NC 27708"
        }
      ]
    },
    {
      "given": "Y.-L.",
      "family": "Chao",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Wafer Bonding Laboratory, School of Engineering, Duke University, Durham, NC 27708"
        }
      ]
    },
    {
      "given": "T. Y.",
      "family": "Tan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Wafer Bonding Laboratory, School of Engineering, Duke University, Durham, NC 27708"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020313472158800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1201",
      "DOI": "10.1049/el:19950805",
      "volume": "31",
      "year": "1995",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020313472158800_r2"
    },
    {
      "key": "2024020313472158800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1636",
      "DOI": "10.1143/JJAP.36.1636",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020313472158800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "3519",
      "DOI": "10.1063/1.119219",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313472158800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1065",
      "DOI": "10.1116/1.589416",
      "volume": "15",
      "year": "1997",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020313472158800_r6"
    },
    {
      "key": "2024020313472158800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1390",
      "DOI": "10.1063/1.118586",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020313472158800_r8"
    },
    {
      "key": "2024020313472158800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "5525",
      "DOI": "10.1103/PhysRevB.31.5525",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020313472158800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "2751",
      "DOI": "10.1063/1.353049",
      "volume": "73",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/1/49/18531444/49_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/1/49/18531444/49_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T13:47:43Z",
    "timestamp": 1706968063000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/72/1/49/520305/A-smarter-cut-approach-to-low-temperature-silicon"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        1,
        5
      ]
    ]
  },
  "references-count": 10,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1998,
          1,
          5
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.120601",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        1,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        1,
        5
      ]
    ]
  }
}