DOI: 10.1063/1.120598. Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy

Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy

10.1063/1.120598

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of ∼150 nm. The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequency of the 520 cm−1 Raman band with position has been used to estimate the residual stresses associated with the deformation. The measurements demonstrate the feasibility of nondestructive, submicron stress measurement in semiconductors by near-field Raman spectroscopy.

Bibliography

Webster, S., Batchelder, D. N., & Smith, D. A. (1998). Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy. Applied Physics Letters, 72(12), 1478â1480.

Authors 3

S. Webster (first)
D. N. Batchelder (additional)
D. A. Smith (additional)

References 25 Referenced 98

10.1088/0268-1242/11/2/001 / Semicond. Sci. Technol. (1996)
{'key': '2024020314095230900_r2', 'first-page': '7149', 'volume': '79', 'year': '1996', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1996)
10.1116/1.579867 / J. Vac. Sci. Technol. A (1995)
10.1016/0038-1098(70)90588-0 / Solid State Commun. (1970)
10.1149/1.2086845 / J. Electrochem. Soc. (1990)
10.1063/1.339296 / J. Appl. Phys. (1987)
10.1016/0038-1101(80)90164-1 / Solid-State Electron. (1980)
10.1063/1.94865 / Appl. Phys. Lett. (1984)
10.1016/0304-3991(84)90201-8 / Ultramicroscopy (1984)
10.1126/science.257.5067.189 / Science (1992)
10.1016/0304-3991(95)00117-4 / Ultramicroscopy (1995)
10.1002/(SICI)1097-4555(199608)27:8<579::AID-JRS13>3.0.CO;2-4 / J. Raman Spectrosc. (1996)
{'key': '2024020314095230900_r13', 'first-page': '29', 'volume': '251', 'year': '1991', 'journal-title': 'Science'} / Science (1991)
10.1063/1.106940 / Appl. Phys. Lett. (1992)
{'key': '2024020314095230900_r15'}
10.1103/PhysRevLett.60.2156 / Phys. Rev. Lett. (1988)
10.1038/357645a0 / Nature (London) (1992)
10.1063/1.364340 / J. Appl. Phys. (1997)
10.1063/1.327714 / J. Appl. Phys. (1980)
10.1063/1.363956 / J. Appl. Phys. (1997)
10.1063/1.366270 / J. Appl. Phys. (1997)
10.1063/1.1147073 / Rev. Sci. Instrum. (1996)
10.1063/1.329930 / J. Appl. Phys. (1982)
10.1364/AO.31.004563 / Appl. Opt. (1992)
10.1063/1.336848 / J. Appl. Phys. (1986)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:10 a.m.)
Indexed	3 days, 2 hours ago (Aug. 23, 2025, 12:58 a.m.)
Issued	27 years, 5 months ago (March 23, 1998)
Published	27 years, 5 months ago (March 23, 1998)
Published Print	27 years, 5 months ago (March 23, 1998)

Funders 0

None

BibTeX

@article{Webster_1998, title={Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy}, volume={72}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120598}, DOI={10.1063/1.120598}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Webster, S. and Batchelder, D. N. and Smith, D. A.}, year={1998}, month=mar, pages={1478–1480} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        23
      ]
    ],
    "date-time": "2025-08-23T04:58:56Z",
    "timestamp": 1755925136216
  },
  "reference-count": 25,
  "publisher": "AIP Publishing",
  "issue": "12",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        3,
        23
      ]
    ]
  },
  "abstract": "<jats:p>A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of \u223c150\u2009nm. The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequency of the 520\u2009cm\u22121 Raman band with position has been used to estimate the residual stresses associated with the deformation. The measurements demonstrate the feasibility of nondestructive, submicron stress measurement in semiconductors by near-field Raman spectroscopy.</jats:p>",
  "DOI": "10.1063/1.120598",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:43:06Z",
    "timestamp": 1027690986000
  },
  "page": "1478-1480",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 98,
  "title": "Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy",
  "prefix": "10.1063",
  "volume": "72",
  "author": [
    {
      "given": "S.",
      "family": "Webster",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, University of Leeds, Leeds, LS2\u20099JT, United Kingdom"
        }
      ]
    },
    {
      "given": "D. N.",
      "family": "Batchelder",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, University of Leeds, Leeds, LS2\u20099JT, United Kingdom"
        }
      ]
    },
    {
      "given": "D. A.",
      "family": "Smith",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, University of Leeds, Leeds, LS2\u20099JT, United Kingdom"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020314095230900_r1",
      "doi-asserted-by": "crossref",
      "first-page": "139",
      "DOI": "10.1088/0268-1242/11/2/001",
      "volume": "11",
      "year": "1996",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020314095230900_r2",
      "first-page": "7149",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1234",
      "DOI": "10.1116/1.579867",
      "volume": "13",
      "year": "1995",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020314095230900_r4",
      "doi-asserted-by": "crossref",
      "first-page": "133",
      "DOI": "10.1016/0038-1098(70)90588-0",
      "volume": "8",
      "year": "1970",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024020314095230900_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1987",
      "DOI": "10.1149/1.2086845",
      "volume": "137",
      "year": "1990",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020314095230900_r6",
      "doi-asserted-by": "crossref",
      "first-page": "3346",
      "DOI": "10.1063/1.339296",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r7",
      "doi-asserted-by": "crossref",
      "first-page": "31",
      "DOI": "10.1016/0038-1101(80)90164-1",
      "volume": "23",
      "year": "1980",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020314095230900_r8",
      "doi-asserted-by": "crossref",
      "first-page": "651",
      "DOI": "10.1063/1.94865",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020314095230900_r9",
      "doi-asserted-by": "crossref",
      "first-page": "227",
      "DOI": "10.1016/0304-3991(84)90201-8",
      "volume": "13",
      "year": "1984",
      "journal-title": "Ultramicroscopy"
    },
    {
      "key": "2024020314095230900_r10",
      "doi-asserted-by": "crossref",
      "first-page": "189",
      "DOI": "10.1126/science.257.5067.189",
      "volume": "257",
      "year": "1992",
      "journal-title": "Science"
    },
    {
      "key": "2024020314095230900_r11",
      "doi-asserted-by": "crossref",
      "first-page": "247",
      "DOI": "10.1016/0304-3991(95)00117-4",
      "volume": "61",
      "year": "1995",
      "journal-title": "Ultramicroscopy"
    },
    {
      "key": "2024020314095230900_r12",
      "doi-asserted-by": "crossref",
      "first-page": "579",
      "DOI": "10.1002/(SICI)1097-4555(199608)27:8<579::AID-JRS13>3.0.CO;2-4",
      "volume": "27",
      "year": "1996",
      "journal-title": "J. Raman Spectrosc."
    },
    {
      "key": "2024020314095230900_r13",
      "first-page": "29",
      "volume": "251",
      "year": "1991",
      "journal-title": "Science"
    },
    {
      "key": "2024020314095230900_r14",
      "doi-asserted-by": "crossref",
      "first-page": "2484",
      "DOI": "10.1063/1.106940",
      "volume": "60",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020314095230900_r15"
    },
    {
      "key": "2024020314095230900_r16",
      "doi-asserted-by": "crossref",
      "first-page": "2156",
      "DOI": "10.1103/PhysRevLett.60.2156",
      "volume": "60",
      "year": "1988",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020314095230900_r17",
      "doi-asserted-by": "crossref",
      "first-page": "645",
      "DOI": "10.1038/357645a0",
      "volume": "357",
      "year": "1992",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2024020314095230900_r18",
      "doi-asserted-by": "crossref",
      "first-page": "3057",
      "DOI": "10.1063/1.364340",
      "volume": "81",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r19",
      "doi-asserted-by": "crossref",
      "first-page": "1072",
      "DOI": "10.1063/1.327714",
      "volume": "51",
      "year": "1980",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r20",
      "doi-asserted-by": "crossref",
      "first-page": "2492",
      "DOI": "10.1063/1.363956",
      "volume": "81",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r21",
      "doi-asserted-by": "crossref",
      "first-page": "501",
      "DOI": "10.1063/1.366270",
      "volume": "82",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r22",
      "doi-asserted-by": "crossref",
      "first-page": "2924",
      "DOI": "10.1063/1.1147073",
      "volume": "67",
      "year": "1996",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2024020314095230900_r23",
      "doi-asserted-by": "crossref",
      "first-page": "298",
      "DOI": "10.1063/1.329930",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020314095230900_r24",
      "doi-asserted-by": "crossref",
      "first-page": "4563",
      "DOI": "10.1364/AO.31.004563",
      "volume": "31",
      "year": "1992",
      "journal-title": "Appl. Opt."
    },
    {
      "key": "2024020314095230900_r25",
      "doi-asserted-by": "crossref",
      "first-page": "3318",
      "DOI": "10.1063/1.336848",
      "volume": "59",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/12/1478/18532970/1478_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/72/12/1478/18532970/1478_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T14:10:04Z",
    "timestamp": 1706969404000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/72/12/1478/67859/Submicron-resolution-measurement-of-stress-in"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        3,
        23
      ]
    ]
  },
  "references-count": 25,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          1998,
          3,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.120598",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        3,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        3,
        23
      ]
    ]
  }
}