DOI: 10.1063/1.120526. Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN

Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN

10.1063/1.120526

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using high resolution transmission electron microscopy, a thin pseudomorphic AlN layer (2–3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600 °C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 Å and an a-plane (100) spacing matching that of GaN (2.76 Å), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600 °C and may be the cause.

Bibliography

Luther, B. P., DeLucca, J. M., Mohney, S. E., & Karlicek, R. F. (1997). Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN. Applied Physics Letters, 71(26), 3859â3861.

Authors 4

B. P. Luther (first)
J. M. DeLucca (additional)
S. E. Mohney (additional)
R. F. Karlicek (additional)

References 17 Referenced 80

10.1063/1.111961 / Appl. Phys. Lett. (1994)
10.1063/1.115901 / Appl. Phys. Lett. (1996)
10.1063/1.117060 / Appl. Phys. Lett. (1996)
10.1007/BF02666642 / J. Electron. Mater. (1996)
{'key': '2024020313461829300_r5', 'first-page': '57', 'volume': '70', 'year': '1997', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1997)
{'key': '2024020313461829300_r6', 'first-page': '1097', 'volume': '449', 'year': '1997', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1997)
{'key': '2024020313461829300_r7'}
{'key': '2024020313461829300_r8'}
{'key': '2024020313461829300_r9'}
10.1007/s11664-997-0161-1 / J. Electron. Mater. (1997)
10.1063/1.360917 / J. Appl. Phys. (1996)
{'key': '2024020313461829300_r12'}
10.1116/1.578033 / J. Vac. Sci. Technol. A (1992)
10.1116/1.571140 / J. Vac. Sci. Technol. (1981)
10.1557/JMR.1987.0262 / J. Mater. Res. (1987)
10.1063/1.363912 / J. Appl. Phys. (1997)
10.1007/BF02666640 / J. Electron. Mater. (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 8:46 a.m.)
Indexed	2 months, 1 week ago (June 26, 2025, 1:45 p.m.)
Issued	27 years, 8 months ago (Dec. 29, 1997)
Published	27 years, 8 months ago (Dec. 29, 1997)
Published Print	27 years, 8 months ago (Dec. 29, 1997)

Funders 0

None

BibTeX

@article{Luther_1997, title={Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120526}, DOI={10.1063/1.120526}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Luther, B. P. and DeLucca, J. M. and Mohney, S. E. and Karlicek, R. F.}, year={1997}, month=dec, pages={3859–3861} }

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