DOI: 10.1063/1.120340. Spontaneous formation and photoluminescence of ZnSe dot arrays

Spontaneous formation and photoluminescence of ZnSe dot arrays

10.1063/1.120340

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Highly luminescent ZnSe quantum dot arrays (QDAs) are spontaneously formed on cleavage-induced GaAs (110) surfaces. The QDAs are configured for their preferred growth on the step top. The confinement on carriers results from the difference in the band gaps of the strained ZnSe layer and the strain-relaxed ZnSe QDA. In contrast to other emissions from the ZnSe layer, the linewidth of the QDA emission is dependent neither on temperature nor on excitation intensity. Moreover, the energy position of the QDA emission is stable even at high excitations. These results reflect the δ functionlike density of states of the QDAs. This letter suggests a novel approach to semiconductor QDs and QDAs.

Bibliography

Zhang, B. P., Wang, W. X., Yasuda, T., Segawa, Y., Edamatsu, K., & Itoh, T. (1997). Spontaneous formation and photoluminescence of ZnSe dot arrays. Applied Physics Letters, 71(23), 3370â3372.

Authors 6

B. P. Zhang (first)
W. X. Wang (additional)
T. Yasuda (additional)
Y. Segawa (additional)
K. Edamatsu (additional)
T. Itoh (additional)

References 10 Referenced 18

10.1063/1.111434 / Appl. Phys. Lett. (1994)
{'key': '2024020313401299600_r2', 'first-page': '17', 'volume': '52', 'year': '1995', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1995)
10.1143/JJAP.35.1311 / Jpn. J. Appl. Phys., Part 1 (1996)
10.1063/1.117558 / Appl. Phys. Lett. (1996)
{'key': '2024020313401299600_r5', 'first-page': 'R17', 'volume': '54', 'year': '1996', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1996)
10.1103/PhysRevLett.72.3382 / Phys. Rev. Lett. (1994)
10.1063/1.118888 / Appl. Phys. Lett. (1997)
{'key': '2024020313401299600_r8', 'first-page': '15', 'volume': '46', 'year': '1992', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1992)
10.1016/S0022-0248(96)01167-0 / J. Cryst. Growth (1997)
{'key': '2024020313401299600_r10'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:40 a.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 2:56 a.m.)
Issued	27 years, 8 months ago (Dec. 8, 1997)
Published	27 years, 8 months ago (Dec. 8, 1997)
Published Print	27 years, 8 months ago (Dec. 8, 1997)

Funders 0

None

BibTeX

@article{Zhang_1997, title={Spontaneous formation and photoluminescence of ZnSe dot arrays}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.120340}, DOI={10.1063/1.120340}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, B. P. and Wang, W. X. and Yasuda, T. and Segawa, Y. and Edamatsu, K. and Itoh, T.}, year={1997}, month=dec, pages={3370–3372} }

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