Abstract
We have established a deposition process of high quality a axis oriented YBa2Cu3O7−δ (a-YBCO) and insulating epitaxial PrGaO3 (PGO) films to fabricate a-YBCO/PGO(2.0–3.2 nm)/a-YBCO trilayer junction. The precipitate formation on the bottom a-YBCO was greatly suppressed by the atomic layer modification of the substrate surface with a wet etching and successive atomic layer epitaxy of SrO and BaO atomic layers prior to the YBCO deposition. Crack formation and residual stress in the film due to the thermal expansion mismatch along c axis of YBCO could be eliminated by inserting a buffer layer of a-YBCO deposited with changing the substrate temperature from 580 to 735 °C. The junctions showed a clear hysteresis with its current jump as large as 30%, together with the Fraunhofer diffraction.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:29 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 8:13 a.m.) |
Indexed | 1 month, 1 week ago (July 25, 2025, 6:38 a.m.) |
Issued | 27 years, 11 months ago (Sept. 15, 1997) |
Published | 27 years, 11 months ago (Sept. 15, 1997) |
Published Print | 27 years, 11 months ago (Sept. 15, 1997) |
@article{Tsuchiya_1997, title={YBa 2 Cu 3 O 7−δ trilayer junction with nm thick PrGaO3 barrier}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119968}, DOI={10.1063/1.119968}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsuchiya, R. and Kawasaki, M. and Kubota, H. and Nishino, J. and Sato, H. and Akoh, H. and Koinuma, H.}, year={1997}, month=sep, pages={1570–1572} }