DOI: 10.1063/1.119927. <i>In situ</i> optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001)

In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001)

10.1063/1.119927

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The kinetics of disilane adsorption and hydrogen desorption during low-temperature, ultrahigh vacuum chemical vapor deposition on Si(001) is investigated in situ in real time by monitoring the instantaneous hydrogen coverage using optical second-harmonic generation. A simple two-site adsorption model and first-order desorption are used to establish a reactive sticking coefficient and to predict the Si(001) epitaxial growth rate. The reactive sticking coefficient is temperature independent between 740 and 920 K and equal to 0.04±0.01. Predicted growth rates are in agreement with published growth rates obtained from gas-source molecular-beam epitaxy of Si(001).

Bibliography

Hu, X. F., Xu, Z., Lim, D., Downer, M. C., Parkinson, P. S., Gong, B., Hess, G., & Ekerdt, J. G. (1997). In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001). Applied Physics Letters, 71(10), 1376â1378.

Authors 8

X. F. Hu (first)
Z. Xu (additional)
D. Lim (additional)
M. C. Downer (additional)
P. S. Parkinson (additional)
B. Gong (additional)
G. Hess (additional)
J. G. Ekerdt (additional)

References 21 Referenced 37

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:11 a.m.)
Indexed	1 year, 1 month ago (July 17, 2024, 8:08 p.m.)
Issued	27 years, 11 months ago (Sept. 8, 1997)
Published	27 years, 11 months ago (Sept. 8, 1997)
Published Print	27 years, 11 months ago (Sept. 8, 1997)

Funders 0

None

BibTeX

@article{Hu_1997, title={In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001)}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119927}, DOI={10.1063/1.119927}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hu, X. F. and Xu, Z. and Lim, D. and Downer, M. C. and Parkinson, P. S. and Gong, B. and Hess, G. and Ekerdt, J. G.}, year={1997}, month=sep, pages={1376–1378} }

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