Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is ρ⩾108 Ω cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region.

Bibliography

Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., & Nimtz, G. (1997). Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71(8), 1118–1120.

Authors 6
  1. P. Kordoš (first)
  2. M. Marso (additional)
  3. A. Förster (additional)
  4. J. Darmo (additional)
  5. J. Betko (additional)
  6. G. Nimtz (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:08 a.m.)
Indexed 5 months, 1 week ago (March 26, 2025, 1:35 p.m.)
Issued 28 years ago (Aug. 25, 1997)
Published 28 years ago (Aug. 25, 1997)
Published Print 28 years ago (Aug. 25, 1997)
Funders 0

None

@article{Kordo__1997, title={Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119745}, DOI={10.1063/1.119745}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kordoš, P. and Marso, M. and Förster, A. and Darmo, J. and Betko, J. and Nimtz, G.}, year={1997}, month=aug, pages={1118–1120} }