Abstract
Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is ρ⩾108 Ω cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 8:08 a.m.) |
Indexed | 5 months, 1 week ago (March 26, 2025, 1:35 p.m.) |
Issued | 28 years ago (Aug. 25, 1997) |
Published | 28 years ago (Aug. 25, 1997) |
Published Print | 28 years ago (Aug. 25, 1997) |
@article{Kordo__1997, title={Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119745}, DOI={10.1063/1.119745}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kordoš, P. and Marso, M. and Förster, A. and Darmo, J. and Betko, J. and Nimtz, G.}, year={1997}, month=aug, pages={1118–1120} }