DOI: 10.1063/1.119715. Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

10.1063/1.119715

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Schottky-type light emitting devices have been fabricated on Er-oxide doped Si layers grown by molecular beam epitaxy, in order to study the light emission process of Er-doped Si structures. By applying a reverse bias on the Schottky junction, Er ions incorporated within the depletion layer can be electrically excited via a hot electron impact process. Rather intense electroluminescence (EL) at a wavelength of 1.54 μm has been observed at room temperature. The optoelectronic properties of the devices have been characterized by both input-power dependent and temperature dependent EL measurements. An activation energy value of ∼160 meV responsible for luminescence thermal quenching has been obtained.

Bibliography

Du, C.-X., Ni, W.-X., Joelsson, K. B., & Hansson, G. V. (1997). Room temperature 1.54 Î¼m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy. Applied Physics Letters, 71(8), 1023â1025.

Authors 4

Chun-Xia Du (first)
Wei-Xin Ni (additional)
Kenneth B. Joelsson (additional)
Göran V. Hansson (additional)

References 11 Referenced 26

10.1063/1.95639 / Appl. Phys. Lett. (1985)
10.1063/1.111655 / Appl. Phys. Lett. (1994)
10.1063/1.111977 / Appl. Phys. Lett. (1994)
{'key': '2024020313071784100_r4', 'first-page': '3290', 'volume': '68', 'year': '1994', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1994)
10.1063/1.119178 / Appl. Phys. Lett. (1997)
10.1063/1.104615 / Appl. Phys. Lett. (1991)
10.1016/0022-0248(95)00326-6 / J. Cryst. Growth (1995)
10.1016/0168-583X(95)00737-7 / Nucl. Instrum. Methods Phys. Res. B (1995)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:07 a.m.)
Indexed	5 months ago (March 30, 2025, 5:29 a.m.)
Issued	28 years ago (Aug. 25, 1997)
Published	28 years ago (Aug. 25, 1997)
Published Print	28 years ago (Aug. 25, 1997)

Funders 0

None

BibTeX

@article{Du_1997, title={Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119715}, DOI={10.1063/1.119715}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Du, Chun-Xia and Ni, Wei-Xin and Joelsson, Kenneth B. and Hansson, Göran V.}, year={1997}, month=aug, pages={1023–1025} }

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