Abstract
Compositional inhomogeneity in a GaInN ternary alloy layer is investigated. A theoretical estimation of the interaction parameter based on the delta lattice parameter suggests that the immiscibility of InN in a nitride alloy is very strong. We investigate the compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates. The mechanism of compositional inhomogeneity is discussed.
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@article{Wakahara_1997, title={Compositional inhomogeneity and immiscibility of a GaInN ternary alloy}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119684}, DOI={10.1063/1.119684}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wakahara, Akihiro and Tokuda, Takashi and Dang, Xiao-Zhong and Noda, Susumu and Sasaki, Akio}, year={1997}, month=aug, pages={906–908} }