Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Compositional inhomogeneity in a GaInN ternary alloy layer is investigated. A theoretical estimation of the interaction parameter based on the delta lattice parameter suggests that the immiscibility of InN in a nitride alloy is very strong. We investigate the compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates. The mechanism of compositional inhomogeneity is discussed.

Bibliography

Wakahara, A., Tokuda, T., Dang, X.-Z., Noda, S., & Sasaki, A. (1997). Compositional inhomogeneity and immiscibility of a GaInN ternary alloy. Applied Physics Letters, 71(7), 906–908.

Authors 5
  1. Akihiro Wakahara (first)
  2. Takashi Tokuda (additional)
  3. Xiao-Zhong Dang (additional)
  4. Susumu Noda (additional)
  5. Akio Sasaki (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:06 a.m.)
Indexed 1 week ago (Aug. 26, 2025, 2:38 a.m.)
Issued 28 years ago (Aug. 18, 1997)
Published 28 years ago (Aug. 18, 1997)
Published Print 28 years ago (Aug. 18, 1997)
Funders 0

None

@article{Wakahara_1997, title={Compositional inhomogeneity and immiscibility of a GaInN ternary alloy}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119684}, DOI={10.1063/1.119684}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wakahara, Akihiro and Tokuda, Takashi and Dang, Xiao-Zhong and Noda, Susumu and Sasaki, Akio}, year={1997}, month=aug, pages={906–908} }