Abstract
GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer.
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@article{Mu_oz_1997, title={Photoconductor gain mechanisms in GaN ultraviolet detectors}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119673}, DOI={10.1063/1.119673}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Muñoz, E. and Monroy, E. and Garrido, J. A. and Izpura, I. and Sánchez, F. J. and Sánchez-Garcı́a, M. A. and Calleja, E. and Beaumont, B. and Gibart, P.}, year={1997}, month=aug, pages={870–872} }