Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer.

Authors 9
  1. E. Muñoz (first)
  2. E. Monroy (additional)
  3. J. A. Garrido (additional)
  4. I. Izpura (additional)
  5. F. J. Sánchez (additional)
  6. M. A. Sánchez-Garcı́a (additional)
  7. E. Calleja (additional)
  8. B. Beaumont (additional)
  9. P. Gibart (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:06 a.m.)
Indexed 1 year ago (Aug. 5, 2024, 10:40 a.m.)
Issued 28 years ago (Aug. 18, 1997)
Published 28 years ago (Aug. 18, 1997)
Published Print 28 years ago (Aug. 18, 1997)
Funders 0

None

@article{Mu_oz_1997, title={Photoconductor gain mechanisms in GaN ultraviolet detectors}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119673}, DOI={10.1063/1.119673}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Muñoz, E. and Monroy, E. and Garrido, J. A. and Izpura, I. and Sánchez, F. J. and Sánchez-Garcı́a, M. A. and Calleja, E. and Beaumont, B. and Gibart, P.}, year={1997}, month=aug, pages={870–872} }