DOI: 10.1063/1.119590. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

10.1063/1.119590

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Defect states responsible for leakage current in ultrathin (physical thickness &lt;10 nm) tantalum pentoxide (Ta2O5) films were measured with a novel zero-bias thermally stimulated current technique. It was found that defect states A, whose activation energy was estimated to be about 0.2 eV, can be more efficiently suppressed by using N2O rapid thermal annealing (RTA) instead of using O2 RTA for postdeposition annealing. The leakage current was also smaller for samples with N2O RTA than those with O2 RTA for postdeposition annealing. Hence, defect states A are quite likely to be important in causing leakage current.

Bibliography

Lau, W. S., Zhong, L., Lee, A., See, C. H., Han, T., Sandler, N. P., & Chong, T. C. (1997). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters, 71(4), 500â502.

Authors 7

W. S. Lau (first)
L. Zhong (additional)
Allen Lee (additional)
C. H. See (additional)
Taejoon Han (additional)
N. P. Sandler (additional)
T. C. Chong (additional)

References 11 Referenced 39

{'key': '2024020313000039700_r1', 'first-page': '639', 'year': '1994', 'journal-title': 'Tech. Dig. Int. Electron Devices Meet.'} / Tech. Dig. Int. Electron Devices Meet. (1994)
10.1116/1.588068 / J. Vac. Sci. Technol. B (1995)
10.1016/0040-6090(74)90085-6 / Thin Solid Films (1974)
10.1143/JJAP.34.757 / Jpn. J. Appl. Phys., Part 1 (1995)
10.1143/JJAP.35.2599 / Jpn. J. Appl. Phys., Part 1 (1996)
10.1063/1.362510 / J. Appl. Phys. (1996)
10.1063/1.116663 / Appl. Phys. Lett. (1996)
{'key': '2024020313000039700_r8'}
10.1016/S0040-6090(96)08975-4 / Thin Solid Films (1996)
10.1143/JJAP.30.L1843 / Jpn. J. Appl. Phys., Part 2, Lett. (1991)
10.1143/JJAP.36.661 / Jpn. J. Appl. Phys., Part 1 (1997)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8 a.m.)
Indexed	5 months, 1 week ago (March 22, 2025, 4:31 a.m.)
Issued	28 years, 1 month ago (July 28, 1997)
Published	28 years, 1 month ago (July 28, 1997)
Published Print	28 years, 1 month ago (July 28, 1997)

Funders 0

None

BibTeX

@article{Lau_1997, title={Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119590}, DOI={10.1063/1.119590}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lau, W. S. and Zhong, L. and Lee, Allen and See, C. H. and Han, Taejoon and Sandler, N. P. and Chong, T. C.}, year={1997}, month=jul, pages={500–502} }

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