Abstract
Room-temperature Er3+ photoluminescence increases of a factor of 5 are observed for AlN(Er) samples treated in a H2 plasma at 200 °C for 30 min. The atomic deuterium passivates defects in the AlN, which normally provide alternative carrier recombination routes. Postdeuteration annealing at 300 °C for 20 min removes the luminescence enhancement by depassivating the nonradiative centers. The AlN(Er) provides a high degree of resistance to thermal quenching of luminescence as a function of temperature because of its wide band gap (6.2 eV), and hydrogenation is a simple method for maximizing the optical output in this materials system.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:29 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 8:18 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 6, 2024, 7:29 p.m.) |
Issued | 27 years, 11 months ago (Sept. 29, 1997) |
Published | 27 years, 11 months ago (Sept. 29, 1997) |
Published Print | 27 years, 11 months ago (Sept. 29, 1997) |
@article{Pearton_1997, title={Luminescence enhancement in AlN(Er) by hydrogenation}, volume={71}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119405}, DOI={10.1063/1.119405}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pearton, S. J. and Abernathy, C. R. and MacKenzie, J. D. and Hömmerich, U. and Wu, X. and Wilson, R. G. and Schwartz, R. N. and Zavada, J. M. and Ren, F.}, year={1997}, month=sep, pages={1807–1809} }