DOI: 10.1063/1.119307. Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study

Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study

10.1063/1.119307

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ultrathin (8–23 Å) silicon oxynitrides have been studied in the temperature range of 560–1000 °C in 4 Torr of NO using a sequential growth and analysis approach. X-ray photoelectron spectroscopy indicates that with increasing growth temperature and time, a bonding structure with predominantly Si–O rather than Si–N formation is favored. Simultaneously, the average volume fraction of N (N/N+O) in the dielectric decreases, as a consequence of which the N1s binding energy increases by 0.2–0.8 eV from its initial value of 397.8 eV at a thickness of 8 Å. A correlation of the electrical characteristics of NO grown oxynitrides with nitrogen content and location has been made. A film growth mechanism that takes into account the removal of previously incorporated N by NO is also proposed.

Bibliography

Kamath, A., Kwong, D. L., Sun, Y. M., Blass, P. M., Whaley, S., & White, J. M. (1997). Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study. Applied Physics Letters, 70(1), 63â65.

Authors 6

A. Kamath (first)
D. L. Kwong (additional)
Y. M. Sun (additional)
P. M. Blass (additional)
S. Whaley (additional)
J. M. White (additional)

References 19 Referenced 45

10.1109/55.32430 / IEEE Electron Device Lett. (1989)
{'key': '2024020312053189400_r2'}
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10.1063/1.362993 / J. Appl. Phys. (1996)
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{'key': '2024020312053189400_r7'}
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{'key': '2024020312053189400_r10', 'first-page': '1387', 'volume': '5', 'year': '1987', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1987)
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10.1063/1.114633 / Appl. Phys. Lett. (1995)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:05 a.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 12:21 a.m.)
Issued	28 years, 7 months ago (Jan. 6, 1997)
Published	28 years, 7 months ago (Jan. 6, 1997)
Published Print	28 years, 7 months ago (Jan. 6, 1997)

Funders 0

None

BibTeX

@article{Kamath_1997, title={Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119307}, DOI={10.1063/1.119307}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kamath, A. and Kwong, D. L. and Sun, Y. M. and Blass, P. M. and Whaley, S. and White, J. M.}, year={1997}, month=jan, pages={63–65} }

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