DOI: 10.1063/1.119083. <i>In situ</i> Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature

In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature

10.1063/1.119083

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have developed a method for removing oxides and producing atomically flat Si(100) surfaces with single atomic height steps using a Si flux cleaning technique. By introducing a Si flux in the range 1.0–1.5 Å/s at the onset of an SiO2 thermal desorption step as low as 780 °C, scanning tunneling microscopy (STM) and atomic force microscopy images reveal smooth surfaces with atomically flat terraces with an rms roughness of 0.5 Å and single-step heights of 1.4 Å. STM reveals that A- and B-type steps are present across the entire area of the scanned surface. Desorption of the surface oxide layer with Si fluxes below this range results in rougher surfaces with pits ∼50 Å deep and 1000 Å across. For Si fluxes above this range, no pits are seen but atomic steps are not visible on the surface.

Bibliography

Wilk, G. D., Wei, Y., Edwards, H., & Wallace, R. M. (1997). In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature. Applied Physics Letters, 70(17), 2288â2290.

Authors 4

G. D. Wilk (first)
Yi Wei (additional)
Hal Edwards (additional)
R. M. Wallace (additional)

References 18 Referenced 34

10.1088/0268-1242/9/5/002 / Semicond. Sci. Technol. (1994)
{'key': '2024020312333261300_r2', 'first-page': '215', 'year': '1995', 'journal-title': 'Semicond. Sci. Technol.'} / Semicond. Sci. Technol. (1995)
10.1109/16.506774 / IEEE Trans. Electron Devices (1996)
{'key': '2024020312333261300_r4'}
{'key': '2024020312333261300_r5'}
10.1103/PhysRevLett.55.2332 / Phys. Rev. Lett. (1985)
10.1116/1.574564 / J. Vac. Sci. Technol. A (1987)
10.1116/1.576816 / J. Vac. Sci. Technol. A (1990)
10.1103/PhysRevB.43.14309 / Phys. Rev. B (1991)
10.1116/1.577937 / J. Vac. Sci. Technol. A (1992)
10.1103/PhysRevLett.69.339 / Phys. Rev. Lett. (1992)
10.1016/0039-6028(93)90705-O / Surf. Sci. (1993)
10.1063/1.117388 / Appl. Phys. Lett. (1996)
10.1143/JJAP.20.703 / Jpn. J. Appl. Phys. (1981)
10.1143/JJAP.21.534 / Jpn. J. Appl. Phys. 1 (1982)
10.1143/JJAP.24.564 / Jpn. J. Appl. Phys. 1 (1985)
10.1116/1.576481 / J. Vac. Sci. Technol. A (1990)
{'key': '2024020312333261300_r18'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 7:33 a.m.)
Indexed	3 months ago (June 4, 2025, 4:27 p.m.)
Issued	28 years, 4 months ago (April 28, 1997)
Published	28 years, 4 months ago (April 28, 1997)
Published Print	28 years, 4 months ago (April 28, 1997)

Funders 0

None

BibTeX

@article{Wilk_1997, title={In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.119083}, DOI={10.1063/1.119083}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wilk, G. D. and Wei, Yi and Edwards, Hal and Wallace, R. M.}, year={1997}, month=apr, pages={2288–2290} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        4
      ]
    ],
    "date-time": "2025-06-04T20:27:33Z",
    "timestamp": 1749068853592
  },
  "reference-count": 18,
  "publisher": "AIP Publishing",
  "issue": "17",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1997,
        4,
        28
      ]
    ]
  },
  "abstract": "<jats:p>We have developed a method for removing oxides and producing atomically flat Si(100) surfaces with single atomic height steps using a Si flux cleaning technique. By introducing a Si flux in the range 1.0\u20131.5 \u00c5/s at the onset of an SiO2 thermal desorption step as low as 780\u2009\u00b0C, scanning tunneling microscopy (STM) and atomic force microscopy images reveal smooth surfaces with atomically flat terraces with an rms roughness of 0.5 \u00c5 and single-step heights of 1.4 \u00c5. STM reveals that A- and B-type steps are present across the entire area of the scanned surface. Desorption of the surface oxide layer with Si fluxes below this range results in rougher surfaces with pits \u223c50 \u00c5 deep and 1000 \u00c5 across. For Si fluxes above this range, no pits are seen but atomic steps are not visible on the surface.</jats:p>",
  "DOI": "10.1063/1.119083",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:08Z",
    "timestamp": 1027690568000
  },
  "page": "2288-2290",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 34,
  "title": "<i>In situ</i> Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature",
  "prefix": "10.1063",
  "volume": "70",
  "author": [
    {
      "given": "G. D.",
      "family": "Wilk",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Texas Instruments, Dallas, Texas 75265"
        }
      ]
    },
    {
      "given": "Yi",
      "family": "Wei",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Texas Instruments, Dallas, Texas 75265"
        }
      ]
    },
    {
      "given": "Hal",
      "family": "Edwards",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Texas Instruments, Dallas, Texas 75265"
        }
      ]
    },
    {
      "given": "R. M.",
      "family": "Wallace",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Texas Instruments, Dallas, Texas 75265"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020312333261300_r1",
      "doi-asserted-by": "crossref",
      "first-page": "989",
      "DOI": "10.1088/0268-1242/9/5/002",
      "volume": "9",
      "year": "1994",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020312333261300_r2",
      "first-page": "215",
      "year": "1995",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020312333261300_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1233",
      "DOI": "10.1109/16.506774",
      "volume": "43",
      "year": "1996",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020312333261300_r4"
    },
    {
      "key": "2024020312333261300_r5"
    },
    {
      "key": "2024020312333261300_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2332",
      "DOI": "10.1103/PhysRevLett.55.2332",
      "volume": "55",
      "year": "1985",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020312333261300_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1559",
      "DOI": "10.1116/1.574564",
      "volume": "5",
      "year": "1987",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020312333261300_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1857",
      "DOI": "10.1116/1.576816",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020312333261300_r9",
      "doi-asserted-by": "crossref",
      "first-page": "14309",
      "DOI": "10.1103/PhysRevB.43.14309",
      "volume": "43",
      "year": "1991",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020312333261300_r10",
      "doi-asserted-by": "crossref",
      "first-page": "2314",
      "DOI": "10.1116/1.577937",
      "volume": "10",
      "year": "1992",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020312333261300_r11",
      "doi-asserted-by": "crossref",
      "first-page": "339",
      "DOI": "10.1103/PhysRevLett.69.339",
      "volume": "69",
      "year": "1992",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020312333261300_r12",
      "doi-asserted-by": "crossref",
      "first-page": "213",
      "DOI": "10.1016/0039-6028(93)90705-O",
      "volume": "290",
      "year": "1993",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2024020312333261300_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1270",
      "DOI": "10.1063/1.117388",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312333261300_r14",
      "doi-asserted-by": "crossref",
      "first-page": "703",
      "DOI": "10.1143/JJAP.20.703",
      "volume": "20",
      "year": "1981",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020312333261300_r15",
      "doi-asserted-by": "crossref",
      "first-page": "534",
      "DOI": "10.1143/JJAP.21.534",
      "volume": "21",
      "year": "1982",
      "journal-title": "Jpn. J. Appl. Phys. 1"
    },
    {
      "key": "2024020312333261300_r16",
      "doi-asserted-by": "crossref",
      "first-page": "564",
      "DOI": "10.1143/JJAP.24.564",
      "volume": "24",
      "year": "1985",
      "journal-title": "Jpn. J. Appl. Phys. 1"
    },
    {
      "key": "2024020312333261300_r17",
      "doi-asserted-by": "crossref",
      "first-page": "3692",
      "DOI": "10.1116/1.576481",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020312333261300_r18"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/17/2288/18526325/2288_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/17/2288/18526325/2288_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T12:33:44Z",
    "timestamp": 1706963624000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/70/17/2288/66950/In-situ-Si-flux-cleaning-technique-for-producing"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1997,
        4,
        28
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "17",
    "published-print": {
      "date-parts": [
        [
          1997,
          4,
          28
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.119083",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1997,
        4,
        28
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1997,
        4,
        28
      ]
    ]
  }
}