DOI: 10.1063/1.118777. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

10.1063/1.118777

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report a very low dark current (∼57 pA at 10 V reverse bias) metal–semiconductor–metal photodetectors fabricated on GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The photodetectors exhibit the typical sharp band-edge cutoff, with good responsivity. There is indication of a photoconductive gain mechanism. We also performed a Medici simulation to establish an effective area for current density calculations.

Bibliography

Carrano, J. C., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., & Campbell, J. C. (1997). Very low dark current metalâsemiconductorâmetal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers. Applied Physics Letters, 70(15), 1992â1994.

Authors 5

J. C. Carrano (first)
P. A. Grudowski (additional)
C. J. Eiting (additional)
R. D. Dupuis (additional)
J. C. Campbell (additional)

References 20 Referenced 96

10.1116/1.585897 / J. Vac. Sci. Technol. B (1992)
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{'key': '2024020312303221800_r4', 'volume': '67', 'year': '1993', 'journal-title': 'Microw. J.'} / Microw. J. (1993)
10.1063/1.113783 / Appl. Phys. Lett. (1995)
10.1063/1.115385 / Appl. Phys. Lett. (1995)
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{'key': '2024020312303221800_r8'}
10.1063/1.109207 / Appl. Phys. Lett. (1993)
10.1063/1.115901 / Appl. Phys. Lett. (1996)
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10.1063/1.116034 / Appl. Phys. Lett. (1996)
{'key': '2024020312303221800_r18'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:40 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:30 a.m.)
Indexed	2 months, 1 week ago (June 14, 2025, 11:28 a.m.)
Issued	28 years, 4 months ago (April 14, 1997)
Published	28 years, 4 months ago (April 14, 1997)
Published Print	28 years, 4 months ago (April 14, 1997)

Funders 0

None

BibTeX

@article{Carrano_1997, title={Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118777}, DOI={10.1063/1.118777}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Carrano, J. C. and Grudowski, P. A. and Eiting, C. J. and Dupuis, R. D. and Campbell, J. C.}, year={1997}, month=apr, pages={1992–1994} }

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