DOI: 10.1063/1.118769. Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

10.1063/1.118769

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 μm. The devices were annealed in either H2 or D2 containing atmospheres. The channel transconductance and threshold voltage variations induced by hot-electron injection into the gate are consistent with interface state generation. Charge pumping experiments confirm this conclusion. The lifetime for a 10% reduction in the transconductance is enhanced by ∼10 times for devices annealed in D2 containing atmospheres as compared to those annealed in H2.

Bibliography

Devine, R. A. B., Autran, J.-L., Warren, W. L., Vanheusdan, K. L., & Rostaing, J.-C. (1997). Interfacial hardness enhancement in deuterium annealed 0.25 Î¼m channel metal oxide semiconductor transistors. Applied Physics Letters, 70(22), 2999â3001.

Authors 5

R. A. B. Devine (first)
J.-L. Autran (additional)
W. L. Warren (additional)
K. L. Vanheusdan (additional)
J.-C. Rostaing (additional)

References 7 Referenced 67

10.1063/1.116172 / Appl. Phys. Lett. (1996)
10.1063/1.117664 / Appl. Phys. Lett. (1996)
{'key': '2024020312442695300_r3', 'first-page': '1497', 'volume': 'NS-31', 'year': '1984', 'journal-title': 'IEEE Trans. Plasma Sci.'} / IEEE Trans. Plasma Sci. (1984)
{'key': '2024020312442695300_r4', 'first-page': '1497', 'volume': 'ED-27', 'year': '1980', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1980)
10.1063/1.96974 / Appl. Phys. Lett. (1986)
10.1063/1.1144713 / Rev. Sci. Instrum. (1994)
{'key': '2024020312442695300_r7'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:44 a.m.)
Indexed	4 months ago (April 20, 2025, 12:42 a.m.)
Issued	28 years, 2 months ago (June 2, 1997)
Published	28 years, 2 months ago (June 2, 1997)
Published Print	28 years, 2 months ago (June 2, 1997)

Funders 0

None

BibTeX

@article{Devine_1997, title={Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118769}, DOI={10.1063/1.118769}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Devine, R. A. B. and Autran, J.-L. and Warren, W. L. and Vanheusdan, K. L. and Rostaing, J.-C.}, year={1997}, month=jun, pages={2999–3001} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        20
      ]
    ],
    "date-time": "2025-04-20T04:42:24Z",
    "timestamp": 1745124144182
  },
  "reference-count": 7,
  "publisher": "AIP Publishing",
  "issue": "22",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1997,
        6,
        2
      ]
    ]
  },
  "abstract": "<jats:p>Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 \u03bcm. The devices were annealed in either H2 or D2 containing atmospheres. The channel transconductance and threshold voltage variations induced by hot-electron injection into the gate are consistent with interface state generation. Charge pumping experiments confirm this conclusion. The lifetime for a 10% reduction in the transconductance is enhanced by \u223c10 times for devices annealed in D2 containing atmospheres as compared to those annealed in H2.</jats:p>",
  "DOI": "10.1063/1.118769",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:08Z",
    "timestamp": 1027690568000
  },
  "page": "2999-3001",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 67,
  "title": "Interfacial hardness enhancement in deuterium annealed 0.25 \u03bcm channel metal oxide semiconductor transistors",
  "prefix": "10.1063",
  "volume": "70",
  "author": [
    {
      "given": "R. A. B.",
      "family": "Devine",
      "sequence": "first",
      "affiliation": [
        {
          "name": "France T\u00e9l\u00e9com-CNET, BP 98, 38243 Meylan, France"
        }
      ]
    },
    {
      "given": "J.-L.",
      "family": "Autran",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "LPM, INSA, 69621 Villeurbanne Cedex, France"
        }
      ]
    },
    {
      "given": "W. L.",
      "family": "Warren",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Advanced Materials Laboratory, Albuquerque, New Mexico 87185-1349"
        }
      ]
    },
    {
      "given": "K. L.",
      "family": "Vanheusdan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Advanced Materials Laboratory, Albuquerque, New Mexico 87185-1349"
        }
      ]
    },
    {
      "given": "J.-C.",
      "family": "Rostaing",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Air Liquide Research and Development, 78350 Jouy en Josas, France"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020312442695300_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2526",
      "DOI": "10.1063/1.116172",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312442695300_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2441",
      "DOI": "10.1063/1.117664",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312442695300_r3",
      "first-page": "1497",
      "volume": "NS-31",
      "year": "1984",
      "journal-title": "IEEE Trans. Plasma Sci."
    },
    {
      "key": "2024020312442695300_r4",
      "first-page": "1497",
      "volume": "ED-27",
      "year": "1980",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020312442695300_r5",
      "doi-asserted-by": "crossref",
      "first-page": "133",
      "DOI": "10.1063/1.96974",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312442695300_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2141",
      "DOI": "10.1063/1.1144713",
      "volume": "65",
      "year": "1994",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2024020312442695300_r7"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/22/2999/18527069/2999_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/22/2999/18527069/2999_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T12:44:34Z",
    "timestamp": 1706964274000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/70/22/2999/519203/Interfacial-hardness-enhancement-in-deuterium"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1997,
        6,
        2
      ]
    ]
  },
  "references-count": 7,
  "journal-issue": {
    "issue": "22",
    "published-print": {
      "date-parts": [
        [
          1997,
          6,
          2
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.118769",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1997,
        6,
        2
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1997,
        6,
        2
      ]
    ]
  }
}