DOI: 10.1063/1.118575. Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

10.1063/1.118575

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We demonstrate the improvement of an indium tin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from &gt;20 to &lt;10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness ∼10,000 cd/m2 at 1000 mA/cm2), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 102 to 106–107). The lifetime of the device is also enhanced by two orders of magnitude.

Bibliography

Wu, C. C., Wu, C. I., Sturm, J. C., & Kahn, A. (1997). Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices. Applied Physics Letters, 70(11), 1348â1350.

Authors 4

C. C. Wu (first)
C. I. Wu (additional)
J. C. Sturm (additional)
A. Kahn (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:20 a.m.)
Indexed	1 week, 4 days ago (Aug. 19, 2025, 6:17 a.m.)
Issued	28 years, 5 months ago (March 17, 1997)
Published	28 years, 5 months ago (March 17, 1997)
Published Print	28 years, 5 months ago (March 17, 1997)

Funders 0

None

BibTeX

@article{Wu_1997, title={Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118575}, DOI={10.1063/1.118575}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, C. C. and Wu, C. I. and Sturm, J. C. and Kahn, A.}, year={1997}, month=mar, pages={1348–1350} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T10:17:05Z",
    "timestamp": 1755598625905
  },
  "reference-count": 18,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1997,
        3,
        17
      ]
    ]
  },
  "abstract": "<jats:p>We demonstrate the improvement of an indium tin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from &amp;gt;20 to &amp;lt;10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness \u223c10,000 cd/m2 at 1000 mA/cm2), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 102 to 106\u2013107). The lifetime of the device is also enhanced by two orders of magnitude.</jats:p>",
  "DOI": "10.1063/1.118575",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:29:08Z",
    "timestamp": 1027690148000
  },
  "page": "1348-1350",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 642,
  "title": "Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices",
  "prefix": "10.1063",
  "volume": "70",
  "author": [
    {
      "given": "C. C.",
      "family": "Wu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, Advanced Technology Center for Photonic and Optoelectronic Materials (ATC/POEM), Princeton University, Princeton, New Jersey 08544"
        }
      ]
    },
    {
      "given": "C. I.",
      "family": "Wu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, Advanced Technology Center for Photonic and Optoelectronic Materials (ATC/POEM), Princeton University, Princeton, New Jersey 08544"
        }
      ]
    },
    {
      "given": "J. C.",
      "family": "Sturm",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, Advanced Technology Center for Photonic and Optoelectronic Materials (ATC/POEM), Princeton University, Princeton, New Jersey 08544"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Kahn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, Advanced Technology Center for Photonic and Optoelectronic Materials (ATC/POEM), Princeton University, Princeton, New Jersey 08544"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020312204631600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "913",
      "DOI": "10.1063/1.98799",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "539",
      "DOI": "10.1038/347539a0",
      "volume": "347",
      "year": "1990",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2024020312204631600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "884",
      "DOI": "10.1126/science.273.5277.884",
      "volume": "273",
      "year": "1996",
      "journal-title": "Science"
    },
    {
      "key": "2024020312204631600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2922",
      "DOI": "10.1063/1.112532",
      "volume": "65",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2745",
      "DOI": "10.1063/1.361096",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020312204631600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1656",
      "DOI": "10.1063/1.356350",
      "volume": "75",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020312204631600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "694",
      "DOI": "10.1063/1.359056",
      "volume": "77",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020312204631600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2160",
      "DOI": "10.1063/1.117151",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "3117",
      "DOI": "10.1063/1.116800",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r10"
    },
    {
      "key": "2024020312204631600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "175",
      "DOI": "10.1351/pac199567010175",
      "volume": "67",
      "year": "1995",
      "journal-title": "Pure Appl. Chem."
    },
    {
      "key": "2024020312204631600_r12",
      "doi-asserted-by": "crossref",
      "first-page": "761",
      "DOI": "10.1063/1.107790",
      "volume": "61",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "491",
      "DOI": "10.1002/adma.19940060612",
      "volume": "6",
      "year": "1994",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2024020312204631600_r14",
      "doi-asserted-by": "crossref",
      "first-page": "394",
      "DOI": "10.1063/1.97598",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312204631600_r15",
      "doi-asserted-by": "crossref",
      "first-page": "912",
      "DOI": "10.1063/1.339699",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020312204631600_r16",
      "doi-asserted-by": "crossref",
      "first-page": "1806",
      "DOI": "10.1007/BF02657158",
      "volume": "25",
      "year": "1996",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020312204631600_r17"
    },
    {
      "key": "2024020312204631600_r18",
      "doi-asserted-by": "crossref",
      "first-page": "3524",
      "DOI": "10.1063/1.324149",
      "volume": "48",
      "year": "1977",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/11/1348/18525399/1348_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/11/1348/18525399/1348_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T12:20:59Z",
    "timestamp": 1706962859000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/70/11/1348/67449/Surface-modification-of-indium-tin-oxide-by-plasma"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1997,
        3,
        17
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          1997,
          3,
          17
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.118575",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1997,
        3,
        17
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1997,
        3,
        17
      ]
    ]
  }
}