Abstract
Al x Ga 1−x N (0⩽x⩽1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×108 cmHz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1−xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:29 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 7:16 a.m.) |
Indexed | 5 months ago (March 24, 2025, 2:31 a.m.) |
Issued | 28 years, 6 months ago (Feb. 24, 1997) |
Published | 28 years, 6 months ago (Feb. 24, 1997) |
Published Print | 28 years, 6 months ago (Feb. 24, 1997) |
@article{Walker_1997, title={Al x Ga 1−x N (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118450}, DOI={10.1063/1.118450}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Walker, D. and Zhang, X. and Saxler, A. and Kung, P. and Xu, J. and Razeghi, M.}, year={1997}, month=feb, pages={949–951} }