DOI: 10.1063/1.118406. Ballistic electron emission microscopy study of transport in GaN thin films

Ballistic electron emission microscopy study of transport in GaN thin films

10.1063/1.118406

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ballistic electron emission microscopy (BEEM) measurements on GaN grown on sapphire substrates reveal a second conduction band minimum ∼340 meV above the absolute band minimum at the zone center (Γ point). A significant lateral variation of the energy difference between the two band minima, ±50 meV, was observed which may result from nonuniform strain in the material. The existence of two conduction bands in close proximity may affect device applications, i.e., GaN based lasers and electronic devices.

Bibliography

Brazel, E. G., Chin, M. A., Narayanamurti, V., Kapolnek, D., Tarsa, E. J., & DenBaars, S. P. (1997). Ballistic electron emission microscopy study of transport in GaN thin films. Applied Physics Letters, 70(3), 330â332.

Authors 6

E. G. Brazel (first)
M. A. Chin (additional)
V. Narayanamurti (additional)
D. Kapolnek (additional)
E. J. Tarsa (additional)
S. P. DenBaars (additional)

References 20 Referenced 28

10.1143/JJAP.35.L74 / Jpn. J. Appl. Phys. 2 (1996)
10.1143/JJAP.35.L217 / Jpn. J. Appl. Phys. 2 (1996)
10.1063/1.117894 / Appl. Phys. Lett. (1996)
10.1103/PhysRevLett.60.1406 / Phys. Rev. Lett. (1988)
10.1103/PhysRevLett.61.2368 / Phys. Rev. Lett. (1988)
{'key': '2024020312084742700_r4'}
10.1146/annurev.ms.26.080196.001201 / Annu. Rev. Mater. Sci. (1996)
{'key': '2024020312084742700_r6', 'first-page': '2625', 'volume': '12', 'year': '1994', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1994)
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10.1063/1.111961 / Appl. Phys. Lett. (1994)
{'key': '2024020312084742700_r13'}
{'key': '2024020312084742700_r14'}
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{'key': '2024020312084742700_r16'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:49 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 7:09 a.m.)
Indexed	1 year, 7 months ago (Feb. 3, 2024, 1:22 p.m.)
Issued	28 years, 7 months ago (Jan. 20, 1997)
Published	28 years, 7 months ago (Jan. 20, 1997)
Published Print	28 years, 7 months ago (Jan. 20, 1997)

Funders 0

None

BibTeX

@article{Brazel_1997, title={Ballistic electron emission microscopy study of transport in GaN thin films}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118406}, DOI={10.1063/1.118406}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Brazel, E. G. and Chin, M. A. and Narayanamurti, V. and Kapolnek, D. and Tarsa, E. J. and DenBaars, S. P.}, year={1997}, month=jan, pages={330–332} }

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