DOI: 10.1063/1.118300. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

10.1063/1.118300

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24–40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1×1020/cm3, respectively.

Bibliography

Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., & Kiyoku, H. (1997). Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime. Applied Physics Letters, 70(7), 868â870.

Authors 8

Shuji Nakamura (first)
Masayuki Senoh (additional)
Shin-ichi Nagahama (additional)
Naruhito Iwasa (additional)
Takao Yamada (additional)
Toshio Matsushita (additional)
Yasunobu Sugimoto (additional)
Hiroyuki Kiyoku (additional)

References 15 Referenced 192

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10.1143/JJAP.35.L74 / Jpn. J. Appl. Phys. 1 (1996)
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10.1063/1.115599 / Appl. Phys. Lett. (1996)
10.1063/1.116570 / Appl. Phys. Lett. (1996)
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{'key': '2024020312134435100_r13'}
10.1143/JJAP.30.1620 / Jpn. J. Appl. Phys. 1 (1991)
{'key': '2024020312134435100_r15'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:13 a.m.)
Indexed	4 months, 3 weeks ago (March 31, 2025, 10:04 a.m.)
Issued	28 years, 6 months ago (Feb. 17, 1997)
Published	28 years, 6 months ago (Feb. 17, 1997)
Published Print	28 years, 6 months ago (Feb. 17, 1997)

Funders 0

None

BibTeX

@article{Nakamura_1997, title={Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118300}, DOI={10.1063/1.118300}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nakamura, Shuji and Senoh, Masayuki and Nagahama, Shin-ichi and Iwasa, Naruhito and Yamada, Takao and Matsushita, Toshio and Sugimoto, Yasunobu and Kiyoku, Hiroyuki}, year={1997}, month=feb, pages={868–870} }

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