DOI: 10.1063/1.118236. A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

10.1063/1.118236

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have demonstrated a room-temperature silicon single-electron transistor memory that consists of (i) a narrow channel metal-oxide–semiconductor field-effect transistor with a width (∼10 nm) smaller than the Debye screening length of single electron; and (ii) a nanoscale polysilicon dot (∼7×7 nm) as the floating gate embedded between the channel and the control gate. We have observed that storing one electron on the floating gate can significantly screen the channel from the potential on the control gate, leading to a discrete shift in the threshold voltage, a staircase relationship between the charging voltage and the threshold shift, and a self-limiting charging process.

Bibliography

Guo, L., Leobandung, E., & Chou, S. Y. (1997). A room-temperature silicon single-electron metalâoxideâsemiconductor memory with nanoscale floating-gate and ultranarrow channel. Applied Physics Letters, 70(7), 850â852.

Authors 3

Lingjie Guo (first)
Effendi Leobandung (additional)
Stephen Y. Chou (additional)

References 8 Referenced 124

10.1109/16.310117 / IEEE Trans. Electron Devices (1994)
10.1063/1.116085 / Appl. Phys. Lett. (1996)
10.1063/1.109166 / Appl. Phys. Lett. (1993)
10.1116/1.586659 / J. Vac. Sci. Technol. B (1993)
10.1116/1.588306 / J. Vac. Sci. Technol. B (1995)
10.1063/1.111914 / Appl. Phys. Lett. (1994)
{'key': '2024020312164094000_r7'}
{'key': '2024020312164094000_r8'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:16 a.m.)
Indexed	4 weeks, 1 day ago (July 27, 2025, 3:36 a.m.)
Issued	28 years, 6 months ago (Feb. 17, 1997)
Published	28 years, 6 months ago (Feb. 17, 1997)
Published Print	28 years, 6 months ago (Feb. 17, 1997)

Funders 0

None

BibTeX

@article{Guo_1997, title={A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118236}, DOI={10.1063/1.118236}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guo, Lingjie and Leobandung, Effendi and Chou, Stephen Y.}, year={1997}, month=feb, pages={850–852} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        27
      ]
    ],
    "date-time": "2025-07-27T07:36:49Z",
    "timestamp": 1753601809506
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1997,
        2,
        17
      ]
    ]
  },
  "abstract": "<jats:p>We have demonstrated a room-temperature silicon single-electron transistor memory that consists of (i) a narrow channel metal-oxide\u2013semiconductor field-effect transistor with a width (\u223c10 nm) smaller than the Debye screening length of single electron; and (ii) a nanoscale polysilicon dot (\u223c7\u00d77 nm) as the floating gate embedded between the channel and the control gate. We have observed that storing one electron on the floating gate can significantly screen the channel from the potential on the control gate, leading to a discrete shift in the threshold voltage, a staircase relationship between the charging voltage and the threshold shift, and a self-limiting charging process.</jats:p>",
  "DOI": "10.1063/1.118236",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:08Z",
    "timestamp": 1027690568000
  },
  "page": "850-852",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 124,
  "title": "A room-temperature silicon single-electron metal\u2013oxide\u2013semiconductor memory with nanoscale floating-gate and ultranarrow channel",
  "prefix": "10.1063",
  "volume": "70",
  "author": [
    {
      "given": "Lingjie",
      "family": "Guo",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, NanoStructure Laboratory, University of Minnesota, Minneapolis, Minnesota 55455"
        }
      ]
    },
    {
      "given": "Effendi",
      "family": "Leobandung",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, NanoStructure Laboratory, University of Minnesota, Minneapolis, Minnesota 55455"
        }
      ]
    },
    {
      "given": "Stephen Y.",
      "family": "Chou",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, NanoStructure Laboratory, University of Minnesota, Minneapolis, Minnesota 55455"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020312164094000_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1628",
      "DOI": "10.1109/16.310117",
      "volume": "41",
      "year": "1994",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020312164094000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1377",
      "DOI": "10.1063/1.116085",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312164094000_r3",
      "doi-asserted-by": "crossref",
      "first-page": "2989",
      "DOI": "10.1063/1.109166",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312164094000_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2524",
      "DOI": "10.1116/1.586659",
      "volume": "11",
      "year": "1993",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020312164094000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2865",
      "DOI": "10.1116/1.588306",
      "volume": "13",
      "year": "1995",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020312164094000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1383",
      "DOI": "10.1063/1.111914",
      "volume": "64",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020312164094000_r7"
    },
    {
      "key": "2024020312164094000_r8"
    }
  ],
  "updated-by": [
    {
      "updated": {
        "date-parts": [
          [
            1997,
            7,
            28
          ]
        ],
        "date-time": "1997-07-28T00:00:00Z",
        "timestamp": 870048000000
      },
      "DOI": "10.1063/1.120560",
      "type": "correction",
      "source": "publisher",
      "label": "Correction"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/7/850/18525096/850_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/70/7/850/18525096/850_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T12:16:51Z",
    "timestamp": 1706962611000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/70/7/850/520477/A-room-temperature-silicon-single-electron-metal"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1997,
        2,
        17
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1997,
          2,
          17
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.118236",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1997,
        2,
        17
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1997,
        2,
        17
      ]
    ]
  }
}