DOI: 10.1063/1.118180. Depletion-type thin-film transistors with a ferroelectric insulator

Depletion-type thin-film transistors with a ferroelectric insulator

10.1063/1.118180

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

Bibliography

Prins, M. W. J., Zinnemers, S. E., Cillessen, J. F. M., & Giesbers, J. B. (1997). Depletion-type thin-film transistors with a ferroelectric insulator. Applied Physics Letters, 70(4), 458â460.

Authors 4

M. W. J. Prins (first)
S. E. Zinnemers (additional)
J. F. M. Cillessen (additional)
J. B. Giesbers (additional)

References 14 Referenced 86

{'key': '2024020312093737700_r1'}
{'key': '2024020312093737700_r2'}
10.1063/1.115759 / Appl. Phys. Lett. (1996)
{'key': '2024020312093737700_r4'}
{'key': '2024020312093737700_r5', 'first-page': '67', 'volume': '401', 'year': '1996', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1996)
{'key': '2024020312093737700_r6'}
10.1109/T-ED.1974.17955 / IEEE Trans. Electron Devices (1974)
10.1080/00150197608236584 / Ferroelectrics (1976)
10.1080/10584589508019353 / Integr. Ferroelectr. (1995)
10.1063/1.116273 / Appl. Phys. Lett. (1996)
{'key': '2024020312093737700_r9'}
10.1109/T-ED.1969.16793 / IEEE Trans. Electron Devices (1969)
10.1080/10584589508019351 / Integr. Ferroelectr. (1995)
10.1080/10584589508012922 / Integr. Ferroelectr. (1995)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:09 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 7:59 p.m.)
Issued	28 years, 7 months ago (Jan. 27, 1997)
Published	28 years, 7 months ago (Jan. 27, 1997)
Published Print	28 years, 7 months ago (Jan. 27, 1997)

Funders 0

None

BibTeX

@article{Prins_1997, title={Depletion-type thin-film transistors with a ferroelectric insulator}, volume={70}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118180}, DOI={10.1063/1.118180}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Prins, M. W. J. and Zinnemers, S. E. and Cillessen, J. F. M. and Giesbers, J. B.}, year={1997}, month=jan, pages={458–460} }

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