DOI: 10.1063/1.118040. Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

10.1063/1.118040

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The thermodynamic and photochemical stability of Ga2O3–GaAs interfaces fabricated using in situ multiple-chamber molecular beam epitaxy has been investigated. The Ga2O3 films were deposited on clean, atomically ordered (100) GaAs surfaces using a molecular beam of gallium oxide. Thermally induced degradation of electronic interface properties such as interface recombination velocity S (5750±1250 cm/s) and interface state density Dit(mid-1010 cm−2 eV−1 range) has not been observed after rapid thermal annealing at 800 °C. Furthermore, no interface degradation has been detected during exposure to high intensity laser light. The preservation of excellent electronic interface properties and the absence of interfacial chemical reactions are attributed to AsxOy and elemental As free Ga2O3–GaAs interfaces.

Bibliography

Passlack, M., Hong, M., Mannaerts, J. P., Opila, R. L., & Ren, F. (1996). Thermodynamic and photochemical stability of low interface state density Ga2O3âGaAs structures fabricated by inâsitu molecular beam epitaxy. Applied Physics Letters, 69(3), 302â304.

Authors 5

Matthias Passlack (first)
Minghwei Hong (additional)
Joseph P. Mannaerts (additional)
Robert L. Opila (additional)
Fan Ren (additional)

References 15 Referenced 30

{'key': '2024020311065414600_r1'}
{'key': '2024020311065414600_r2', 'first-page': '1019', 'article-title': 'J. Vac. Sci. Technol.', 'volume': '17', 'year': '1980'} / J. Vac. Sci. Technol. (1980)
{'key': '2024020311065414600_r3', 'first-page': '3', 'article-title': 'Thin Solid Films', 'volume': '103', 'year': '1983'} / Thin Solid Films (1983)
{'key': '2024020311065414600_r4', 'first-page': '794', 'article-title': 'J. Vac. Sci. Technol.', 'volume': '19', 'year': '1981'} / J. Vac. Sci. Technol. (1981)
{'key': '2024020311065414600_r5', 'first-page': '716', 'article-title': 'Appl. Phys. Lett.', 'volume': '60', 'year': '1992'} / Appl. Phys. Lett. (1992)
{'key': '2024020311065414600_r6', 'first-page': 'L329', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '32', 'year': '1993'} / Jpn. J. Appl. Phys. (1993)
{'key': '2024020311065414600_r7', 'first-page': '332', 'article-title': 'Appl. Phys. Lett.', 'volume': '54', 'year': '1989'} / Appl. Phys. Lett. (1989)
{'key': '2024020311065414600_r8'}
{'key': '2024020311065414600_r9'}
{'key': '2024020311065414600_r10', 'first-page': '1099', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311065414600_r11'}
{'key': '2024020311065414600_r12', 'first-page': '686', 'article-title': 'J. Appl. Phys.', 'volume': '77', 'year': '1995'} / J. Appl. Phys. (1995)
{'key': '2024020311065414600_r13', 'first-page': '259', 'article-title': 'CRC Crit. Rev. Solid State Sci.', 'volume': '5', 'year': '1975'} / CRC Crit. Rev. Solid State Sci. (1975)
{'key': '2024020311065414600_r14'}
{'key': '2024020311065414600_r15', 'first-page': '911', 'article-title': 'Surf. Interface Anal.', 'volume': '17', 'year': '1991'} / Surf. Interface Anal. (1991)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:06 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:22 p.m.)
Issued	29 years, 1 month ago (July 15, 1996)
Published	29 years, 1 month ago (July 15, 1996)
Published Print	29 years, 1 month ago (July 15, 1996)

Funders 0

None

BibTeX

@article{Passlack_1996, title={Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.118040}, DOI={10.1063/1.118040}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Passlack, Matthias and Hong, Minghwei and Mannaerts, Joseph P. and Opila, Robert L. and Ren, Fan}, year={1996}, month=jul, pages={302–304} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        8
      ]
    ],
    "date-time": "2024-02-08T01:22:28Z",
    "timestamp": 1707355348355
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        7,
        15
      ]
    ]
  },
  "abstract": "<jats:p>The thermodynamic and photochemical stability of Ga2O3\u2013GaAs interfaces fabricated using in\u2008situ multiple-chamber molecular beam epitaxy has been investigated. The Ga2O3 films were deposited on clean, atomically ordered (100) GaAs surfaces using a molecular beam of gallium oxide. Thermally induced degradation of electronic interface properties such as interface recombination velocity S (5750\u00b11250 cm/s) and interface state density Dit(mid-1010 cm\u22122\u2009eV\u22121 range) has not been observed after rapid thermal annealing at 800\u2009\u00b0C. Furthermore, no interface degradation has been detected during exposure to high intensity laser light. The preservation of excellent electronic interface properties and the absence of interfacial chemical reactions are attributed to AsxOy and elemental As free Ga2O3\u2013GaAs interfaces.</jats:p>",
  "DOI": "10.1063/1.118040",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:43:06Z",
    "timestamp": 1027690986000
  },
  "page": "302-304",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 30,
  "title": "Thermodynamic and photochemical stability of low interface state density Ga2O3\u2013GaAs structures fabricated by <i>in</i>\u2008<i>situ</i> molecular beam epitaxy",
  "prefix": "10.1063",
  "volume": "69",
  "author": [
    {
      "given": "Matthias",
      "family": "Passlack",
      "sequence": "first",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "Minghwei",
      "family": "Hong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "Joseph P.",
      "family": "Mannaerts",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "Robert L.",
      "family": "Opila",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "Fan",
      "family": "Ren",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020311065414600_r1"
    },
    {
      "key": "2024020311065414600_r2",
      "first-page": "1019",
      "article-title": "J. Vac. Sci. Technol.",
      "volume": "17",
      "year": "1980"
    },
    {
      "key": "2024020311065414600_r3",
      "first-page": "3",
      "article-title": "Thin Solid Films",
      "volume": "103",
      "year": "1983"
    },
    {
      "key": "2024020311065414600_r4",
      "first-page": "794",
      "article-title": "J. Vac. Sci. Technol.",
      "volume": "19",
      "year": "1981"
    },
    {
      "key": "2024020311065414600_r5",
      "first-page": "716",
      "article-title": "Appl. Phys. Lett.",
      "volume": "60",
      "year": "1992"
    },
    {
      "key": "2024020311065414600_r6",
      "first-page": "L329",
      "article-title": "Jpn. J. Appl. Phys.",
      "volume": "32",
      "year": "1993"
    },
    {
      "key": "2024020311065414600_r7",
      "first-page": "332",
      "article-title": "Appl. Phys. Lett.",
      "volume": "54",
      "year": "1989"
    },
    {
      "key": "2024020311065414600_r8"
    },
    {
      "key": "2024020311065414600_r9"
    },
    {
      "key": "2024020311065414600_r10",
      "first-page": "1099",
      "article-title": "Appl. Phys. Lett.",
      "volume": "68",
      "year": "1996"
    },
    {
      "key": "2024020311065414600_r11"
    },
    {
      "key": "2024020311065414600_r12",
      "first-page": "686",
      "article-title": "J. Appl. Phys.",
      "volume": "77",
      "year": "1995"
    },
    {
      "key": "2024020311065414600_r13",
      "first-page": "259",
      "article-title": "CRC Crit. Rev. Solid State Sci.",
      "volume": "5",
      "year": "1975"
    },
    {
      "key": "2024020311065414600_r14"
    },
    {
      "key": "2024020311065414600_r15",
      "first-page": "911",
      "article-title": "Surf. Interface Anal.",
      "volume": "17",
      "year": "1991"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/3/302/18520221/302_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/69/3/302/18520221/302_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T11:06:56Z",
    "timestamp": 1706958416000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/69/3/302/66877/Thermodynamic-and-photochemical-stability-of-low"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        7,
        15
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1996,
          7,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.118040",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        7,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        7,
        15
      ]
    ]
  }
}