DOI: 10.1063/1.117876. Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

10.1063/1.117876

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present the results of spectroscopic studies on GaN based epitaxial materials on SiC substrates by metalorganic chemical vapor deposition. A variety of techniques has been used to study the optical properties of GaN epilayers and GaN/AlGaN heterostructures. Sharp spectral structures associated with the intrinsic free excitons were observed by photoluminescence and reflectance measurements from GaN based materials grown on SiC substrates. The residual strain was found to have a strong influence in determining the energies of exciton transitions. Picosecond relaxation studies of exciton decay dynamics suggest that an AlGaN cladding layer with a small mole fraction of AlN can be relatively effective in enhancing the radiative recombination rate for excitons by reducing the density of dislocations and suppressing surface recombination velocity in the GaN active layer for the GaN/AlGaN heterostructure samples.

Bibliography

Shan, W., Fischer, A. J., Song, J. J., Bulman, G. E., Kong, H. S., Leonard, M. T., Perry, W. G., Bremser, M. D., & Davis, R. F. (1996). Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates. Applied Physics Letters, 69(6), 740â742.

Authors 9

W. Shan (first)
A. J. Fischer (additional)
J. J. Song (additional)
G. E. Bulman (additional)
H. S. Kong (additional)
M. T. Leonard (additional)
W. G. Perry (additional)
M. D. Bremser (additional)
R. F. Davis (additional)

References 16 Referenced 50

{'key': '2024020311131824500_r1', 'first-page': '515', 'article-title': 'Mater. Res. Soc. Symp. Proc.', 'volume': '162', 'year': '1990'} / Mater. Res. Soc. Symp. Proc. (1990)
{'key': '2024020311131824500_r2', 'first-page': '1237', 'article-title': 'J. Vac. Sci. Technol. B', 'volume': '10', 'year': '1992'} / J. Vac. Sci. Technol. B (1992)
{'key': '2024020311131824500_r3', 'first-page': '1363', 'article-title': 'J. Appl. Phys.', 'volume': '76', 'year': '1994'} / J. Appl. Phys. (1994)
{'key': '2024020311131824500_r4', 'first-page': '1', 'article-title': 'Appl. Phys. Lett.', 'volume': '66', 'year': '1995'} / Appl. Phys. Lett. (1995)
{'key': '2024020311131824500_r5'}
{'key': '2024020311131824500_r6', 'first-page': 'L74', 'article-title': 'Jpn. J. Appl. Phys.', 'volume': '35', 'year': '1996'} / Jpn. J. Appl. Phys. (1996)
{'key': '2024020311131824500_r7', 'first-page': '2105', 'article-title': 'Appl. Phys. Lett.', 'volume': '68', 'year': '1996'} / Appl. Phys. Lett. (1996)
{'key': '2024020311131824500_r8', 'first-page': '175', 'article-title': 'Solid State Commun.', 'volume': '9', 'year': '1971'} / Solid State Commun. (1971)
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{'key': '2024020311131824500_r14'}
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{'key': '2024020311131824500_r16'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:13 a.m.)
Indexed	20 minutes ago (Aug. 29, 2025, 3:26 a.m.)
Issued	29 years ago (Aug. 5, 1996)
Published	29 years ago (Aug. 5, 1996)
Published Print	29 years ago (Aug. 5, 1996)

Funders 0

None

BibTeX

@article{Shan_1996, title={Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates}, volume={69}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.117876}, DOI={10.1063/1.117876}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shan, W. and Fischer, A. J. and Song, J. J. and Bulman, G. E. and Kong, H. S. and Leonard, M. T. and Perry, W. G. and Bremser, M. D. and Davis, R. F.}, year={1996}, month=aug, pages={740–742} }

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